Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2018
• Автори: Klimovskaya, A.I., Kalashnyk, Yu.Yu., Voroshchenko, A.T., Oberemok, O.S., Pedchenko, Yu.M., Lytvyn, P.M.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Теми: Hetero- and low-dimensional structures
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/215286
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology / A.I. Klimovskaya, Yu.Yu. Kalashnyk, A.T. Voroshchenko, O.S. Oberemok, Yu.M. Pedchenko, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 282-287. — Бібліогр.: 22 назв. — англ.

In spite of the fact that a great deal of experimental research has been published, there is a lack of good understanding of silicon nanowire growth to exert control over important properties of the system, though it presents the simplest system, like gold on a silicon substrate. In the current rese...