Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology
In spite of the fact that a great deal of experimental research has been published, there is a lack of good understanding of silicon nanowire growth to exert control over important properties of the system, though it presents the simplest system, like gold on a silicon substrate. In the current rese...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2018 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215286 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology / A.I. Klimovskaya, Yu.Yu. Kalashnyk, A.T. Voroshchenko, O.S. Oberemok, Yu.M. Pedchenko, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 282-287. — Бібліогр.: 22 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862604105808084992 |
|---|---|
| author | Klimovskaya, A.I. Kalashnyk, Yu.Yu. Voroshchenko, A.T. Oberemok, O.S. Pedchenko, Yu.M. Lytvyn, P.M. |
| author_facet | Klimovskaya, A.I. Kalashnyk, Yu.Yu. Voroshchenko, A.T. Oberemok, O.S. Pedchenko, Yu.M. Lytvyn, P.M. |
| citation_txt | Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology / A.I. Klimovskaya, Yu.Yu. Kalashnyk, A.T. Voroshchenko, O.S. Oberemok, Yu.M. Pedchenko, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 282-287. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In spite of the fact that a great deal of experimental research has been published, there is a lack of good understanding of silicon nanowire growth to exert control over important properties of the system, though it presents the simplest system, like gold on a silicon substrate. In the current research, to find the best conditions to grow silicon nanowires with prespecified properties, we studied various technological regimes, both of growth-seed formation and conditions of silicon nanowire growth.
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| first_indexed | 2026-03-21T12:46:32Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215286 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-04-16T05:34:57Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Klimovskaya, A.I. Kalashnyk, Yu.Yu. Voroshchenko, A.T. Oberemok, O.S. Pedchenko, Yu.M. Lytvyn, P.M. 2026-03-11T10:14:49Z 2018 Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology / A.I. Klimovskaya, Yu.Yu. Kalashnyk, A.T. Voroshchenko, O.S. Oberemok, Yu.M. Pedchenko, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 282-287. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS: 81.07.Gf https://nasplib.isofts.kiev.ua/handle/123456789/215286 https://doi.org/10.15407/spqeo21.03.282 In spite of the fact that a great deal of experimental research has been published, there is a lack of good understanding of silicon nanowire growth to exert control over important properties of the system, though it presents the simplest system, like gold on a silicon substrate. In the current research, to find the best conditions to grow silicon nanowires with prespecified properties, we studied various technological regimes, both of growth-seed formation and conditions of silicon nanowire growth. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Hetero- and low-dimensional structures Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology Article published earlier |
| spellingShingle | Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology Klimovskaya, A.I. Kalashnyk, Yu.Yu. Voroshchenko, A.T. Oberemok, O.S. Pedchenko, Yu.M. Lytvyn, P.M. Hetero- and low-dimensional structures |
| title | Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology |
| title_full | Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology |
| title_fullStr | Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology |
| title_full_unstemmed | Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology |
| title_short | Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology |
| title_sort | growth of silicon self-assembled nanowires by using gold-enhanced cvd technology |
| topic | Hetero- and low-dimensional structures |
| topic_facet | Hetero- and low-dimensional structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215286 |
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