Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology
In spite of the fact that a great deal of experimental research has been published, there is a lack of good understanding of silicon nanowire growth to exert control over important properties of the system, though it presents the simplest system, like gold on a silicon substrate. In the current rese...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215286 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology / A.I. Klimovskaya, Yu.Yu. Kalashnyk, A.T. Voroshchenko, O.S. Oberemok, Yu.M. Pedchenko, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 282-287. — Бібліогр.: 22 назв. — англ. |