Features of electrochemical processes at the boundary p-GaAs-HF water solution
Investigated in this work are polarization curves typical for the interface p-GaAs-HF water solution with the concentration of fluoric acid between 1 and 10 mass.%. The shape of these curves has been compared with that following from analytical expressions obtained with account of the general equati...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2018 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
|
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215287 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Features of electrochemical processes at the boundary p-GaAs-HF water solution / G.A. Pashchenko, M.Yu. Kravetskyi, L.I. Trishchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 277-281. — Бібліогр.: 11 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862600692204568576 |
|---|---|
| author | Pashchenko, G.A. Kravetskyi, M.Yu. Trishchuk, L.I. |
| author_facet | Pashchenko, G.A. Kravetskyi, M.Yu. Trishchuk, L.I. |
| citation_txt | Features of electrochemical processes at the boundary p-GaAs-HF water solution / G.A. Pashchenko, M.Yu. Kravetskyi, L.I. Trishchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 277-281. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Investigated in this work are polarization curves typical for the interface p-GaAs-HF water solution with the concentration of fluoric acid between 1 and 10 mass.%. The shape of these curves has been compared with that following from analytical expressions obtained with account of the general equation for electrochemical kinetics. This equation was considered for partial cases of electrode potential re-distribution between the Helmholtz layers and the space charge region (SCR) in a semiconductor. It has been found that the shape of polarization curves corresponds to the state when exchange reactions at the above boundary for the used HF concentrations take place mainly via the valence band with participation of holes, while the electrode potential redistributes between the semiconductor SCR and the Helmholtz layer. Determined also have been the ranges of current density where transfer of current carriers takes place through the boundary p-GaAs-HF water solution (electrochemical stage), exchange currents for cathode and anode biases, coefficient of charge carrier transfer under the cathode bias.
|
| first_indexed | 2026-03-21T12:46:38Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215287 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-04-16T04:40:41Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Pashchenko, G.A. Kravetskyi, M.Yu. Trishchuk, L.I. 2026-03-11T10:14:58Z 2018 Features of electrochemical processes at the boundary p-GaAs-HF water solution / G.A. Pashchenko, M.Yu. Kravetskyi, L.I. Trishchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 277-281. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 81.05.Ea, 82.45.Vp https://nasplib.isofts.kiev.ua/handle/123456789/215287 https://doi.org/10.15407/spqeo21.03.277 Investigated in this work are polarization curves typical for the interface p-GaAs-HF water solution with the concentration of fluoric acid between 1 and 10 mass.%. The shape of these curves has been compared with that following from analytical expressions obtained with account of the general equation for electrochemical kinetics. This equation was considered for partial cases of electrode potential re-distribution between the Helmholtz layers and the space charge region (SCR) in a semiconductor. It has been found that the shape of polarization curves corresponds to the state when exchange reactions at the above boundary for the used HF concentrations take place mainly via the valence band with participation of holes, while the electrode potential redistributes between the semiconductor SCR and the Helmholtz layer. Determined also have been the ranges of current density where transfer of current carriers takes place through the boundary p-GaAs-HF water solution (electrochemical stage), exchange currents for cathode and anode biases, coefficient of charge carrier transfer under the cathode bias. The authors are very thankful to Candidate of Sciences (Phys&Math) G. V. Beketov for useful consultations. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor Physics Features of electrochemical processes at the boundary p-GaAs-HF water solution Article published earlier |
| spellingShingle | Features of electrochemical processes at the boundary p-GaAs-HF water solution Pashchenko, G.A. Kravetskyi, M.Yu. Trishchuk, L.I. Semiconductor Physics |
| title | Features of electrochemical processes at the boundary p-GaAs-HF water solution |
| title_full | Features of electrochemical processes at the boundary p-GaAs-HF water solution |
| title_fullStr | Features of electrochemical processes at the boundary p-GaAs-HF water solution |
| title_full_unstemmed | Features of electrochemical processes at the boundary p-GaAs-HF water solution |
| title_short | Features of electrochemical processes at the boundary p-GaAs-HF water solution |
| title_sort | features of electrochemical processes at the boundary p-gaas-hf water solution |
| topic | Semiconductor Physics |
| topic_facet | Semiconductor Physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215287 |
| work_keys_str_mv | AT pashchenkoga featuresofelectrochemicalprocessesattheboundarypgaashfwatersolution AT kravetskyimyu featuresofelectrochemicalprocessesattheboundarypgaashfwatersolution AT trishchukli featuresofelectrochemicalprocessesattheboundarypgaashfwatersolution |