Features of electrochemical processes at the boundary p-GaAs-HF water solution

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2018
• Main Authors: Pashchenko, G.A., Kravetskyi, M.Yu., Trishchuk, L.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Subjects: Semiconductor Physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215287
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Features of electrochemical processes at the boundary p-GaAs-HF water solution / G.A. Pashchenko, M.Yu. Kravetskyi, L.I. Trishchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 277-281. — Бібліогр.: 11 назв. — англ.

Investigated in this work are polarization curves typical for the interface p-GaAs-HF water solution with the concentration of fluoric acid between 1 and 10 mass.%. The shape of these curves has been compared with that following from analytical expressions obtained with account of the general equati...