Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface
The effect of illumination in the visible spectral range on the magnitude of transverse acoustoelectric effect (TAE) in ZnS/Si structures was studied using a noncontact surface acoustic wave device based on the acoustoelectronic structure with an air gap. ZnS films were obtained using pyrolysis of t...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215289 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface / N.P. Tatyanenko, N.N. Roshchina, V.L. Gromashevskii, G.S. Svechnikov, L.V. Zavyalova, B.A. Snopok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 263-272. — Бібліогр.: 36 назв. — англ. |