Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2018
• Main Authors: Tatyanenko, N.P., Roshchina, N.N., Gromashevskii, V.L., Svechnikov, G.S., Zavyalova, L.V., Snopok, B.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Subjects: Semiconductor Physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215289
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface / N.P. Tatyanenko, N.N. Roshchina, V.L. Gromashevskii, G.S. Svechnikov, L.V. Zavyalova, B.A. Snopok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 263-272. — Бібліогр.: 36 назв. — англ.

The effect of illumination in the visible spectral range on the magnitude of transverse acoustoelectric effect (TAE) in ZnS/Si structures was studied using a noncontact surface acoustic wave device based on the acoustoelectronic structure with an air gap. ZnS films were obtained using pyrolysis of t...