Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
The lateral bipolar electric transport has been investigated for multi-period n-In₀.₀₈Ga₀.₉₂As/GaAs heterostructures with tunnel-coupled double-quantum wells for various carrier mobilities at temperatures 4.2…160 K. The presence of two types of charge carriers – electrons and holes – is identified b...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215290 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells / M.M. Vinoslavskii, P.A. Belevskii, V.M. Poroshin, O.S. Pilipchuk, V.O. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 256-262. — Бібліогр.: 36 назв. — англ. |