Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
The lateral bipolar electric transport has been investigated for multi-period n-In₀.₀₈Ga₀.₉₂As/GaAs heterostructures with tunnel-coupled double-quantum wells for various carrier mobilities at temperatures 4.2…160 K. The presence of two types of charge carriers – electrons and holes – is identified b...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2018 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215290 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells / M.M. Vinoslavskii, P.A. Belevskii, V.M. Poroshin, O.S. Pilipchuk, V.O. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 256-262. — Бібліогр.: 36 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862623157298397184 |
|---|---|
| author | Vinoslavskii, M.M. Belevskii, P.A. Poroshin, V.M. Pilipchuk, O.S. Kochelap, V.O. |
| author_facet | Vinoslavskii, M.M. Belevskii, P.A. Poroshin, V.M. Pilipchuk, O.S. Kochelap, V.O. |
| citation_txt | Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells / M.M. Vinoslavskii, P.A. Belevskii, V.M. Poroshin, O.S. Pilipchuk, V.O. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 256-262. — Бібліогр.: 36 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The lateral bipolar electric transport has been investigated for multi-period n-In₀.₀₈Ga₀.₉₂As/GaAs heterostructures with tunnel-coupled double-quantum wells for various carrier mobilities at temperatures 4.2…160 K. The presence of two types of charge carriers – electrons and holes – is identified by observation of interband electroluminescence (EL). We found that the current-voltage characteristic has a complex nonlinear shape and changes with current, which is accompanied by modification of the EL intensity and spectrum. We observed oscillations of the current and EL intensity with the frequency of tens of MHz, which both arise at the electric fields well below the threshold field of the Gunn instability. Oscillations of the EL intensity occur in the opposite phase to the current. The electric and EL measurements have shown that the minority carriers, the holes, are supplied from the anode side of the sample. Spatial separation of electrons and holes in the doublequantum well structures provides abnormally large both electron-hole recombination time and drift length of the holes. Studied behavior of the current and EL can be interpreted as a combined effect of the spatial separation of the electrons and holes and the dynamics of their transfer between undoped and doped quantum wells. We suggest that observed real-space transfer effects in high-field bipolar electric transport and, particularly, highly intensive interband electroluminescence from macroscopically large areas may be used in a number of optoelectronic applications.
|
| first_indexed | 2026-03-21T12:46:50Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215290 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-04-16T10:37:46Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vinoslavskii, M.M. Belevskii, P.A. Poroshin, V.M. Pilipchuk, O.S. Kochelap, V.O. 2026-03-11T10:16:11Z 2018 Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells / M.M. Vinoslavskii, P.A. Belevskii, V.M. Poroshin, O.S. Pilipchuk, V.O. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 256-262. — Бібліогр.: 36 назв. — англ. 1560-8034 PACS: 73.63.Hs, 78.60.Fi, 78.67.De https://nasplib.isofts.kiev.ua/handle/123456789/215290 https://doi.org/10.15407/spqeo21.03.256 The lateral bipolar electric transport has been investigated for multi-period n-In₀.₀₈Ga₀.₉₂As/GaAs heterostructures with tunnel-coupled double-quantum wells for various carrier mobilities at temperatures 4.2…160 K. The presence of two types of charge carriers – electrons and holes – is identified by observation of interband electroluminescence (EL). We found that the current-voltage characteristic has a complex nonlinear shape and changes with current, which is accompanied by modification of the EL intensity and spectrum. We observed oscillations of the current and EL intensity with the frequency of tens of MHz, which both arise at the electric fields well below the threshold field of the Gunn instability. Oscillations of the EL intensity occur in the opposite phase to the current. The electric and EL measurements have shown that the minority carriers, the holes, are supplied from the anode side of the sample. Spatial separation of electrons and holes in the doublequantum well structures provides abnormally large both electron-hole recombination time and drift length of the holes. Studied behavior of the current and EL can be interpreted as a combined effect of the spatial separation of the electrons and holes and the dynamics of their transfer between undoped and doped quantum wells. We suggest that observed real-space transfer effects in high-field bipolar electric transport and, particularly, highly intensive interband electroluminescence from macroscopically large areas may be used in a number of optoelectronic applications. The authors would like to thank O.G. Sarbey and V.V. Vainberg for discussions, as well as N.V. Baidus and B.N. Zvonkov for fabricating the heterostructures used in the investigations. The work was supported by the fundamental research program of the National Academy of Sciences of Ukraine “Fundamental Problems of Creating New Nanomaterials and Nanotechnologies” (Project #1.10-18). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor Physics Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells Article published earlier |
| spellingShingle | Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells Vinoslavskii, M.M. Belevskii, P.A. Poroshin, V.M. Pilipchuk, O.S. Kochelap, V.O. Semiconductor Physics |
| title | Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells |
| title_full | Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells |
| title_fullStr | Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells |
| title_full_unstemmed | Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells |
| title_short | Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells |
| title_sort | current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-gaas/ingaas/gaas quantum wells |
| topic | Semiconductor Physics |
| topic_facet | Semiconductor Physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215290 |
| work_keys_str_mv | AT vinoslavskiimm currentandelectroluminescenceintensityoscillationsunderbipolarlateralelectrictransportinthedoublegaasingaasgaasquantumwells AT belevskiipa currentandelectroluminescenceintensityoscillationsunderbipolarlateralelectrictransportinthedoublegaasingaasgaasquantumwells AT poroshinvm currentandelectroluminescenceintensityoscillationsunderbipolarlateralelectrictransportinthedoublegaasingaasgaasquantumwells AT pilipchukos currentandelectroluminescenceintensityoscillationsunderbipolarlateralelectrictransportinthedoublegaasingaasgaasquantumwells AT kochelapvo currentandelectroluminescenceintensityoscillationsunderbipolarlateralelectrictransportinthedoublegaasingaasgaasquantumwells |