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Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells

The lateral bipolar electric transport has been investigated for multi-period n-In₀.₀₈Ga₀.₉₂As/GaAs heterostructures with tunnel-coupled double-quantum wells for various carrier mobilities at temperatures 4.2…160 K. The presence of two types of charge carriers – electrons and holes – is identified b...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2018
Hauptverfasser: Vinoslavskii, M.M., Belevskii, P.A., Poroshin, V.M., Pilipchuk, O.S., Kochelap, V.O.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
Schlagworte:
Semiconductor Physics
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/215290
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells / M.M. Vinoslavskii, P.A. Belevskii, V.M. Poroshin, O.S. Pilipchuk, V.O. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 256-262. — Бібліогр.: 36 назв. — англ.

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