Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2018
• Main Authors: Vinoslavskii, M.M., Belevskii, P.A., Poroshin, V.M., Pilipchuk, O.S., Kochelap, V.O.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Subjects: Semiconductor Physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215290
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells / M.M. Vinoslavskii, P.A. Belevskii, V.M. Poroshin, O.S. Pilipchuk, V.O. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 256-262. — Бібліогр.: 36 назв. — англ.

The lateral bipolar electric transport has been investigated for multi-period n-In₀.₀₈Ga₀.₉₂As/GaAs heterostructures with tunnel-coupled double-quantum wells for various carrier mobilities at temperatures 4.2…160 K. The presence of two types of charge carriers – electrons and holes – is identified b...