2D semiconductor structures as a basis for new high-tech devices (Review)
In this article, we present a short overview of the Ukrainian contribution to the physics of 2D semiconductor structures as a basis for high-tech devices of modern nanoelectronics, together with some new results in this field. The possibility of creating “low-threshold” 2D lasers in Si₃N₄-GaAs and A...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215323 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | 2D semiconductor structures as a basis for new high-tech devices (Review) / D.V. Korbutyak, V.G. Lytovchenko, M.V. Strikha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 380-386. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862691147124572160 |
|---|---|
| author | Korbutyak, D.V. Lytovchenko, V.G. Strikha, M.V. |
| author_facet | Korbutyak, D.V. Lytovchenko, V.G. Strikha, M.V. |
| citation_txt | 2D semiconductor structures as a basis for new high-tech devices (Review) / D.V. Korbutyak, V.G. Lytovchenko, M.V. Strikha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 380-386. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this article, we present a short overview of the Ukrainian contribution to the physics of 2D semiconductor structures as a basis for high-tech devices of modern nanoelectronics, together with some new results in this field. The possibility of creating “low-threshold” 2D lasers in Si₃N₄-GaAs and AlxGa₁₋ₓAs-GaAs layered heterostructures, in which a two-dimensional electron-hole plasma (EHP) is formed, has been analyzed. The investigations of optical amplification spectra in heterostructures with a two-dimensional quantum well have been performed in detail. It has been demonstrated that under the conditions of simultaneous co-existence of 3D-EHP and 2D-EHP, stimulated radiation is formed predominantly in 2D-EHP, with the laser excitation threshold at which optical amplification occurs in 2D-EHP by two orders of magnitude lower than in 3D-EHP, and the corresponding value of the coefficient of optical amplification is 2.5 times greater. A simple theoretical model of electron heating in a system with two valleys is applied to describe 2D semiconductor monolayers of the MoS₂ and WS₂ types. The model is demonstrated to describe sufficiently well the available experimental data on the negative differential conductance effect in a WS₂ monolayer. It confirms the possibility of fabricating Gunn diodes of a new and advanced EMW generation based on the structures concerned. These diodes are capable of generating frequencies of the order of 10 GHz and higher, which makes them attractive for HF practical applications.
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| first_indexed | 2026-03-23T18:47:44Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215323 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:47:44Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Korbutyak, D.V. Lytovchenko, V.G. Strikha, M.V. 2026-03-12T08:54:50Z 2018 2D semiconductor structures as a basis for new high-tech devices (Review) / D.V. Korbutyak, V.G. Lytovchenko, M.V. Strikha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 380-386. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 42.55.Px, 78.55.-m, 78.60.-b, 78.67.-n, 85.30.Fg, 85.35.Be https://nasplib.isofts.kiev.ua/handle/123456789/215323 https://doi.org/10.15407/spqeo21.04.380 In this article, we present a short overview of the Ukrainian contribution to the physics of 2D semiconductor structures as a basis for high-tech devices of modern nanoelectronics, together with some new results in this field. The possibility of creating “low-threshold” 2D lasers in Si₃N₄-GaAs and AlxGa₁₋ₓAs-GaAs layered heterostructures, in which a two-dimensional electron-hole plasma (EHP) is formed, has been analyzed. The investigations of optical amplification spectra in heterostructures with a two-dimensional quantum well have been performed in detail. It has been demonstrated that under the conditions of simultaneous co-existence of 3D-EHP and 2D-EHP, stimulated radiation is formed predominantly in 2D-EHP, with the laser excitation threshold at which optical amplification occurs in 2D-EHP by two orders of magnitude lower than in 3D-EHP, and the corresponding value of the coefficient of optical amplification is 2.5 times greater. A simple theoretical model of electron heating in a system with two valleys is applied to describe 2D semiconductor monolayers of the MoS₂ and WS₂ types. The model is demonstrated to describe sufficiently well the available experimental data on the negative differential conductance effect in a WS₂ monolayer. It confirms the possibility of fabricating Gunn diodes of a new and advanced EMW generation based on the structures concerned. These diodes are capable of generating frequencies of the order of 10 GHz and higher, which makes them attractive for HF practical applications. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Hetero- and low-dimensional structures 2D semiconductor structures as a basis for new high-tech devices (Review) Article published earlier |
| spellingShingle | 2D semiconductor structures as a basis for new high-tech devices (Review) Korbutyak, D.V. Lytovchenko, V.G. Strikha, M.V. Hetero- and low-dimensional structures |
| title | 2D semiconductor structures as a basis for new high-tech devices (Review) |
| title_full | 2D semiconductor structures as a basis for new high-tech devices (Review) |
| title_fullStr | 2D semiconductor structures as a basis for new high-tech devices (Review) |
| title_full_unstemmed | 2D semiconductor structures as a basis for new high-tech devices (Review) |
| title_short | 2D semiconductor structures as a basis for new high-tech devices (Review) |
| title_sort | 2d semiconductor structures as a basis for new high-tech devices (review) |
| topic | Hetero- and low-dimensional structures |
| topic_facet | Hetero- and low-dimensional structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215323 |
| work_keys_str_mv | AT korbutyakdv 2dsemiconductorstructuresasabasisfornewhightechdevicesreview AT lytovchenkovg 2dsemiconductorstructuresasabasisfornewhightechdevicesreview AT strikhamv 2dsemiconductorstructuresasabasisfornewhightechdevicesreview |