2D semiconductor structures as a basis for new high-tech devices (Review)
In this article, we present a short overview of the Ukrainian contribution to the physics of 2D semiconductor structures as a basis for high-tech devices of modern nanoelectronics, together with some new results in this field. The possibility of creating “low-threshold” 2D lasers in Si₃N₄-GaAs and A...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Цитувати: | 2D semiconductor structures as a basis for new high-tech devices (Review) / D.V. Korbutyak, V.G. Lytovchenko, M.V. Strikha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 380-386. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860479656429355008 |
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| author | Korbutyak, D.V. Lytovchenko, V.G. Strikha, M.V. |
| author_facet | Korbutyak, D.V. Lytovchenko, V.G. Strikha, M.V. |
| citation_txt | 2D semiconductor structures as a basis for new high-tech devices (Review) / D.V. Korbutyak, V.G. Lytovchenko, M.V. Strikha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 380-386. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this article, we present a short overview of the Ukrainian contribution to the physics of 2D semiconductor structures as a basis for high-tech devices of modern nanoelectronics, together with some new results in this field. The possibility of creating “low-threshold” 2D lasers in Si₃N₄-GaAs and AlxGa₁₋ₓAs-GaAs layered heterostructures, in which a two-dimensional electron-hole plasma (EHP) is formed, has been analyzed. The investigations of optical amplification spectra in heterostructures with a two-dimensional quantum well have been performed in detail. It has been demonstrated that under the conditions of simultaneous co-existence of 3D-EHP and 2D-EHP, stimulated radiation is formed predominantly in 2D-EHP, with the laser excitation threshold at which optical amplification occurs in 2D-EHP by two orders of magnitude lower than in 3D-EHP, and the corresponding value of the coefficient of optical amplification is 2.5 times greater. A simple theoretical model of electron heating in a system with two valleys is applied to describe 2D semiconductor monolayers of the MoS₂ and WS₂ types. The model is demonstrated to describe sufficiently well the available experimental data on the negative differential conductance effect in a WS₂ monolayer. It confirms the possibility of fabricating Gunn diodes of a new and advanced EMW generation based on the structures concerned. These diodes are capable of generating frequencies of the order of 10 GHz and higher, which makes them attractive for HF practical applications.
|
| first_indexed | 2026-03-23T18:47:44Z |
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ISSN 1560-8034, 1605-6582 (On-line), SPQEO, 2018. V. 21, N 4. P. 380-386.
© 2018, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
380
Hetero- and low-dimensional structures
2D semiconductor structures as a basis for new high-tech devices
(Review)
D.V. Korbutyak
1
, V.G. Lytovchenko
1
, M.V. Strikha
1,2
1
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: kdv45@isp.kiev.ua
2
Taras Shevchenko Kyiv National University, Radiophysical Faculty, 4g, prospect Akademika Hlushkova,
03022 Kyiv, Ukraine
Abstract. In this article, we present a short overview of the Ukrainian contribution into
physics of 2D semiconductor structures as a basis for high-tech devices of modern
nanoelectronics together with some new results in this field. The possibility of creating
“low-threshold” 2D lasers in Si3N4-GaAs and AlxGa1–xAs-GaAs layered heterostructures, in
which two-dimensional electron-hole plasma (EHP) is formed, has been analyzed. The
investigations of optical amplification spectra in heterostructures with a two-dimensional
quantum well have been performed in details. It has been demonstrated that under the
conditions of simultaneous co-existence of 3D-EHP and 2D-EHP, stimulated radiation is
formed predominantly in 2D-EHP, with the laser excitation threshold at which optical
amplification occurs in 2D-EHP by two orders of magnitude lower than in 3D-EHP, and
the corresponding value of the coefficient of optical amplification is 2.5 times greater. A
simple theoretical model of electron heating in a system with two valleys is applied to
describe 2D semiconductor monolayers of the MoS2 and WS2 types. The model is
demonstrated to describe sufficiently well the available experimental data on the negative
differential conductance effect in a WS2 monolayer. It confirms the possibility to fabricate
Gunn diodes of a new and advanced EMW generation based on the structures concerned.
These diodes are capable to generate frequencies of the order of 10 GHz and higher, which
makes them attractive for HF practical applications.
Keywords: 2D semiconductor, electron-hole plasma, optical gain, laser emission, Gunn
diode.
doi: https://doi.org/10.15407/spqeo21.04.380
PACS 42.55.Px, 78.55.-m, 78.60.-b, 78.67.-n, 85.30.Fg, 85.35.Be
Manuscript received 01.11.18; revised version received 23.11.18; accepted for publication
29.11.18; published online 03.12.18.
1. Surface electron-hole plasma for designing 2D
lasers
2D lasers that are characterized by an ultralow power
(several orders of magnitude lower than that for the 3D
lasers with laser excitation) have become, in recent years,
one of the central areas of laser physics and engineering.
The basic problem here is formation of a photosensitive
material monolayer (e.g., SeS2, WS2, MoS2 and some
other layered semiconductors), in which stimulated
radiation is obtained and which is placed in an optical
resonator with a terminal output of laser radiation [1, 2].
Much earlier than current publications, the
stimulated radiation of 2D electron-hole plasma (2D-
EHP) was observed and analyzed in the Department of
Surface Science, V. Lashkaryov Institute of
Semiconductor Physics, NAS of Ukraine by
V.G. Lytovchenko and D.V. Korbutyak et al. [3-8].
By contrast to the monolayer design, where the
existence of stimulated emission requires the use of
ultrahigh technologies (atomic molecular, MBE
deposition etc.), the proposed method involves
condensation of excitons at the surface and then
formation of quasi-2D plasma due to various
mechanisms: surface traps, attraction mirror image
forces, narrowing the energy gap near the surface at high
concentrations of excited charge carriers, creation of a
surface potential well for excitons, etc. Consequently, a
liquid 2D electron-hole phase (EHP) of high density can
be obtained at the surface, which, in the presence of
intense excitation, causes stimulated radiation, and in the
presence of a resonator, can form a laser beam.
SPQEO, 2018. V. 21, N 4. P. 380-386.
Korbutyak D.V., Lytovchenko V.G., Strikha M.V. 2D semiconductor structures as a basis for new high-tech devices …
381
Fig. 1. Spontaneous (I1) and stimulated (I2) emission spectra of
GaAs (a) and interface Si3N4-GaAs (b) at 4.2 K; the excitation
density L = 5.5 MW/cm2.
The process of condensed EHP formation at Si3N4-
GaAs [3, 4] interfaces and at ion-bombarded ZnO [5, 6]
surface was studied earlier in details. The main
peculiarities of a 2D electron-hole condensate (2D-EHC)
in comparison to those of a three-dimensional (3D) one
were analyzed. A number of important peculiarities are to
be expected also for stimulated radiation of 2D-EHP [6-
8]. Below, we shall describe new data concerning
properties of the non-equilibrium 2D-EHP and
perspectives for new 2D laser devices.
Let us analyze the spectra of spontaneous and
stimulated emission in Si3N4-GaAs and GaAs-A1xGa1-xAs
heterostructures over a wide range of excitation intensities
and compare the thresholds at which optical gain first
appears for the quasi-2D- and 3D-EHP. On the base on our
analysis of the shape of the optical gain spectrum, we then
determine the fundamental parameters of EHP formed at
extremely high excitation levels. By taking into account
outward streaming effects, we can determine the kinetic
(drift) characteristics of the 2D plasma and compare it with
the 3D case.
In order to investigate the photoluminescence (PL)
spectra, we used a LGN-502 CW argon laser and a
pulsed Nd
3+
:YAG laser (the second harmonic of the
latter). We used also a MDR-23 monochromator to
record the emission spectra, and we got the spectra of the
optical gain coefficients (according to the method
described in [6]). Fig. 1 demonstrates spontaneous and
stimulated bulk (3D) emission spectra of GaAs and
interface Si3N4-GaAs, and Fig. 2 presents a comparison
of the spontaneous and stimulated emission spectra of the
GaAs-Al0.3Ga0.7As heterostructures under pulsed laser
excitation at various power densities. For the excitation
levels used, we observed two bands in the spontaneous
emission spectrum, one due to irradiative recombination
of electrons and holes in the non-equilibrium EHP
located in the bulk GaAs (the short-wavelength part of
the spectrum) and second due to recombination in the
Fig. 2. Spontaneous (I1) and stimulated (I2) emission spectra of
GaAs-Al0.3Ga0.7As heterostructures at 4.2 K; L in MW/cm2
equals: 10 (a), 2 (b), 0.8 (c) and 0.04 (d).
Fig. 3. Optical gain spectra of GaAs-Al0.3Ga0.7As
heterostructures for various excitation power densities L; the
points are experimental (T = 4.2 K), the solid lines are
calculated; L in MW/cm2 is: 0.04 (1), 0.8 (2), 2 (3), 10 (4).
SPQEO, 2018. V. 21, N 4. P. 380-386.
Korbutyak D.V., Lytovchenko V.G., Strikha M.V. 2D semiconductor structures as a basis for new high-tech devices …
382
Fig. 4. Dependence of the optical gain coefficient (at its
maximum) on the excitation power density for the GaAs-
AI0.3Ga0.7As heterostructure (1), the insulator-semiconductor
structure Si3N4-GaAs (2) and GaAs (3) at 4.2 K.
quasi-2D-EHP localized at the GaAs-Al0.3Ga0.7As
boundary (the longwave part of the spectrum). It is
noteworthy that stimulated emission was observed in
these structures only for the quasi-2D-EHP.
The spectra of the optical gain coefficient g were
found from the relation between the stimulated (I2) and
spontaneous (I1) emission intensities measured at
identical pump power densities:
( )
gl
gl
I
I 1exp
2
1 −
= .
Here, l is the length of that part of the laser beam
producing gain (in our case l = 130 µm). Fig. 3 presents
the calculated spectra of g at four excitation power
densities (the points are taken from our experiment).
Note the considerable broadening of the optical gain
spectrum and its shift toward longer wavelengths with
increasing the excitation power density.
Let us consider the optical gain spectrum. Fig. 2
demonstrates that intense stimulated emission is observed
only in the spectral region of spontaneous luminescence
of 2D-EHP. These results indicate that under conditions
that give rise to coexisting of 3D- and 2D-EHP, the
optical gain effects take place primarily in 2D-EHP. It is
interesting to compare the threshold for appearance of
optical gain and the values of gmax for 3D- and 2D-EHP.
In Fig. 4, we demonstrate the dependence of gmax on the
excitation power density for the GaAs-Al0.3Ga0.7As
heterostructure studied in this paper along with the
corresponding dependences [9], for a Si3N4-GaAs
structure in which quasi-2D-EHP can be obtained, and
GaAs with a free surface (with 3D-EHP). The excitation
threshold at which optical gain appears in the layered
Si3N4-GaAs structure is of the factor 3 lower than that of
bulk GaAs; for the GaAs-Al0.3Ga0.7As heterostructure,
the excitation threshold is lower by the factor 60. At the
same time, the maximum value of the optical gain
coefficient for the Si3N4-GaAs is roughly 1.5 times
higher than that in bulk GaAs, while the value for the
GaAs-Al0.3Ga0.7As heterostructure is 2.5 times higher.
Thus, the transition from 3D-EHP to 2D-EHP
significantly decreases the threshold for the appearance
of optical gain stimulated beam and simultaneously
increases g. The main physical reason for this is the
concentration of plasma along one (normal) coordinate in
the 2D case. The obtained results indicate the superiority
of 2D-EHP compared with 3D-EHP for designing lasers,
which was demonstrated first in [8].
It is clear from the optical gain spectra presented in
Fig. 3 for the GaAs-Al0.3Ga0.7As heterostructure that
since the level of excitation increases, the spectra
broadens, predominantly because of pulling toward the
longwave region. We can model this type of behavior by
taking into account the so-called “outward streaming
effect” in the dynamics of the non-equilibrium carriers;
this effect is a consequence of forces acting on the
carriers associated with the gradient of the Fermi
pressure [6].
A detailed analysis of features of the shape and
width of EHL photoluminescence (PL) band
dependences both on the temperature (the line narrows
with growing the temperature), and on the excitation
intensity enabled us to conclude [4, 5] that PL band
under consideration is caused by the two-dimensional 2D
condensed EHP. A typical feature of this strongly
oversaturated EHP (10
24
quanta/cm
2
·s) is that the
maximum intensity of PL is observed from the edges of
the studied samples with the maximum at λ = 829 nm
Fig. 5. (a) Spectrogram of the stimulated radiation of GaAs-
Si3N4 structure, which is excited by a ruby laser. (b) Schematic
plot of the three-particle interaction – irradiative
recombination of electron-hole pairs with a birth of plasmons.
(c), (d) Experimental (solid curves) and theoretical (dash-dotted
curves) of the radiation from 3D (c) and quasi-2D (d) EHC,
created in ZnO by an optical excitation. T = 4.2 K.
SPQEO, 2018. V. 21, N 4. P. 380-386.
Korbutyak D.V., Lytovchenko V.G., Strikha M.V. 2D semiconductor structures as a basis for new high-tech devices …
383
Fig. 6. Structure of the conduction band in monolayers of
transition metal chalcogenides. The presence of K- and T-
valleys allows the effect of negative differential conductance.
(Fig. 5). This fact proves the appearance of stimulated
radiation of EHC amplified by the total internal reflection
of the volume resonator formed by the natural crystal
planes.
Additional possibilities for obtaining 2D liquid
electron-hole plasma at elevated temperatures were
analyzed by us in [10]. Thus, for nanostructures ZnO,
InP, GaN it is possible to form lasers at elevated
temperatures (even higher than the room one) in the case
of exciton condensation in quantum-sized structures.
2. Electronic 2D devices based on hot electrons (2D
generators – Gunn diodes)
In recent years, various monolayers with semiconducting
properties (MoS2, WSe2, other chalcogenides of
transition metals, black phosphorus, and others; see, e.g.,
the papers [11, 12]) were intensively synthesized and
studied. The most known from this class of materials are
the MoS2 and WS2 monolayers; these are direct-band
semiconductors with the bandgap widths Eg ≈ 1.7 and
1.8 eV, respectively. The extrema of the conduction and
valence bands are located at the points K and K′ of the
hexagonal Brillouin zone [13], as it also takes place in
graphene.
The results of calculations carried out from the first
principles, by using the density functional method,
demonstrated that the conduction band spectrum of those
materials includes a lateral extremum (the T-valley) with
energies by approximately 0.2 and 0.08 eV larger than
the band bottom energy, which is located in the direction
from the points K and K′ to the Brillouin zone center Γ
(Fig. 6). The energy spectrum near those two extrema is
parabolic. The presence of two subbands in the
conduction band – lower (denoted by subscript 1) and
upper (denoted by subscript 2) ones, for which the
effective-mass relation m1 < m2 for 2D two-dimensional
electrons is obeyed [14] – gives us grounds to expect that
the effect of negative differential conductance, which is
associated with the filling by field-heated electrons of the
higher valley characterized by a higher effective mass,
can take place in 2D monolayers of the WS2 or MoS2
type [15]. Note that this effect has already been observed
in “traditional” (not 2D) quantum heterostructures [16].
Recently, it has been also studied in quantum
heterostructures composed of multilayered phosphorus
and rhenium disulfide [16] or graphene (ultrathin
graphite) and boron nitride [17].
The negative differential conductance has been
experimentally revealed quite recently in WS2
monolayers [18]. It was shown that, if the monolayer is
unstrained, the effect does not take place owing to a
small energy distance between the valleys, ∆E ≈ 0.08 eV,
because, at room temperature, electrons begin to fill the
T-valley at minimum values of the fields between the
gate and drain. However, if a biaxial compression is
applied, and ∆E ~ 0.1 eV or somewhat higher, the effect
of negative differential conductance begins to be clearly
distinguished in the dependence of the current through
the field transistor on the field between the gate and
drain. The detected effect can open promising prospects
for creation of microwave devices in the frequency range
of tens of GHz or higher. Therefore, it is important to
have a convenient semi-phenomenological model for its
description, similarly to that widely used for three-
dimensional materials [15]. For the field-heated electrons
redistributed between the valleys K (subscript 1) and T
(subscript 2), the current density through the
semiconductor can be written as follows:
( ) envnneJ =εµ+µ= 2211 , (1)
where the electron concentrations n1,2 in two subbands
are related by the equality n1 + n2 = n, ε is the electric
field, and v – average drift velocity of electrons.
The electron concentration ratio between the
subbands is associated with the energy ∆E and
temperature of hot electrons Te by the obvious expression
[15]
∆
−=
ekT
E
R
n
n
exp
1
2 , (2)
where the factor R is the ratio between the numbers of
available quantum states in subbands 2 and 1. Taking
into account that the degeneration degree equals g2 = 2 in
the K-valley, and g2 = 6 in the T-valley [12, 13], and
adopting standard expressions for the 2D densities of
state in the case of parabolic spectrum,
hπ
=
2,12,1 mg
D ,
13
1
2 >>=
m
m
R . (3)
In the approximation of the energy relaxation time,
the dependence of the drift velocity on the field can be
written in the standard form
SPQEO, 2018. V. 21, N 4. P. 380-386.
Korbutyak D.V., Lytovchenko V.G., Strikha M.V. 2D semiconductor structures as a basis for new high-tech devices …
384
Applied field (kV/cm)
Fig. 7. Dependences of the drift velocity in WS2 on the applied
field calculated according to Eq. (4) for the temperature
T = 300 K and various ∆E-values.
1
1
2
1 1
−
+εµ=
n
n
v . (4)
The electron temperature Te that enters Eqs. (2) and
(4) looks like
1
1
221 1
3
3
−
+ε
µτ
+=
n
n
k
e
TT e
e . (5)
Fig. 7 demonstrates the dependences of the electron
drift velocity (4) in WS2 on the applied field calculated
according to Eqs. (2), (3), and (5) for the temperature
T = 300 K and various ∆E-values from 0.03 to 0.27 eV.
Fig. 8 exhibits the dependences of the ratio between
the electron concentration n2 in the upper T-valley and
the total electron concentration n in the conduction band
on the electric field ε calculated for the same room
temperature.
In these calculations, the following probable
parameter values were used: τe = 10
−12
s,
µ1 = 500 cm
2
/(V·s), m2/m1 = 10. At ∆E = 0.25 eV, the
indicated values provide a good agreement with the
experimental curve and correlate with the data given for
WS2 in literature. Note that the ratio between the
effective masses in the K- and T-valleys (in accordance
with the data presented in [18], this parameter equals
0.3 m0 and 0.75 m0, respectively) is somewhat lower, but
the given values are relevant only in vicinities of the
extrema and do not make allowance for the mass increase
with the energy in the T-valley.
One can see from Fig. 7 that, starting from a certain
threshold value ∆E ≈ 0.15 eV, the dependence v(ε)
acquires a maximum, and the ratio n2/n begins to grow
under the fields corresponding to this maximum (this
phenomenon corresponds to the intensive filling the
upper valley in the conduction band by heated electrons).
At lower ∆E-values, as shown in Fig. 8, electrons
actively transit to the upper valley already at the
minimum electric field values ε, and the effect of
negative differential conductance is absent.
Applied field (kV/cm)
Fig. 8. Dependences of the ratio between the electron
concentration in the upper T-valley, n2, and the total electron
concentration in the conduction band, n, on the electric field
calculated for T = 300 K.
Hence, the proposed theoretical model of electron
heating in the system with two valleys [19], which was
adapted by us for the first time to describe 2D
semiconductor monolayers of the MoS2 and WS2 types,
can well describe available experimental data. It confirms
the possibility to create a new generation of Gunn diodes
on the basis of 2D structures. The frequencies that can be
obtained with these diodes can be easily estimated from
the relation
L
v
f ~ , (6)
where L is the diode channel length.
For the parameter values corresponding to the
system that was studied in [18] (v = 4·10
6
cm/s and
L = 5 µm), we obtain f ~ 10 GHz, which makes such
these potentially attractive for a number of practical
applications.
The model described in this paper also makes it
possible to estimate a potential capability to create Gunn
diodes on the basis of other 2D semiconductor
monolayers and thin quantum wells, which are based on
both traditional electronic materials and carbon allotropes
“between graphene and graphite”. The latter, as we
showed in work [20], can also possess useful
semiconductor properties.
3. Conclusions
In this review paper, we have discussed two types of 2D
structures: 2D atomic layer and 2D electron-hole plasma.
2D layered structures attract the extended interest from
the viewpoint to develop new high-tech devices: optical,
electrical and others. In a series of papers (see [3-8, 10])
we have demonstrated that 3D electron-hole plasma (3D-
EHP) located in the bulk GaAs coexists with 2D-EHP in
the GaAs-AlGaAs and GaAs-Si3N4 heterostructures. The
stimulated emission (necessary condition for creation of
SPQEO, 2018. V. 21, N 4. P. 380-386.
Korbutyak D.V., Lytovchenko V.G., Strikha M.V. 2D semiconductor structures as a basis for new high-tech devices …
385
lasers) is predominantly generated in 2D-EHP. The
threshold excitation at which optical gain appears in the
2D-EHP is two orders of magnitude lower than in 3D-
EHP, while the magnitude of the optical gain coefficient
for GaAs-A1GaAs is 2.5 times higher than it is in GaAs
under the same photoexcitation conditions. These
characteristics are very important in relation with the
possible use of a non-equilibrium 2D-EHP as a source of
laser light emission.
Other types of 2D structures, for which the
theoretical model of electron heating in the system with
two valleys was adapted in [19] for the first time to
describe 2D semiconductor monolayers of the MoS2 and
WS2 types, can well describe available experimental data.
It confirms the possibility to create a new generation of
Gunn diodes on the basis of those structures. The model
described in this paper also makes it possible to estimate
a potential capability to create Gunn diodes on the basis
of other 2D semiconductor monolayers and thin quantum
wells, which are based on both traditional electronic
materials and carbon allotropes “between graphene and
graphite”.
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Korbutyak D.V., Lytovchenko V.G., Strikha M.V. 2D semiconductor structures as a basis for new high-tech devices …
386
Authors and CV
D.V. Korbutyak Doctor of Physical
and Mathematical Sciences,
Professor, Laureate of the State Prize
of Ukraine in the field of science and
technology.
The main scientific works are devoted
to the study of the luminescence
properties of non-doped and doped
with various impurities A
2
B
6
nanocrystals, hybrid
semiconductor-metal nanostructures, and to elucidation
of mechanisms of radiative processes in semiconductor
nanocrystals. He is the author of two monographs, over
300 scientific works in the area of semiconductor physics
and nanocrystals.
Head of the Semiconductor Nanophotonics Department
at the V. Lashkaryov Institute of Semiconductor Physics,
National Academy of Sciences of Ukraine.
E-mail: kdv45@isp.kiev.ua
V.G. Lytovchenko Doctor of
Physical and Mathematical Sciences,
Corresponding Member of the
National Academy of Sciences of
Ukraine, Laureate of the State Prize
of Ukraine in the field of science and
technology.
He is one of the founders of the direction Surface Physics
of Semiconductors and Microelectronics. Discovered a
number of new effects (luminescent surface glow,
stimulated by defects of the splitting of bands in thin
graphite-like films). He is the author of 10 monographs
and over 500 scientific papers.
Head of the Department of Physics of the Surface of
Semiconductors and Microelectronics at the V.
Lashkaryov Institute of Semiconductor Physics, National
Academy of Sciences of Ukraine.
M.V. Strikha
Doctor of Physical and
Mathematical Sciences, Deputy
Minister of Education and Science of
Ukraine.
He constructed a consistent theory of
optical and recombination transitions
in semiconductors with defects,
deformations,heterogeneities of composition. In recent
years, the main scientific interests are related to the
physics of graphene.
|
| id | nasplib_isofts_kiev_ua-123456789-215323 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:47:44Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Korbutyak, D.V. Lytovchenko, V.G. Strikha, M.V. 2026-03-12T08:54:50Z 2018 2D semiconductor structures as a basis for new high-tech devices (Review) / D.V. Korbutyak, V.G. Lytovchenko, M.V. Strikha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 380-386. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 42.55.Px, 78.55.-m, 78.60.-b, 78.67.-n, 85.30.Fg, 85.35.Be https://nasplib.isofts.kiev.ua/handle/123456789/215323 https://doi.org/10.15407/spqeo21.04.380 In this article, we present a short overview of the Ukrainian contribution to the physics of 2D semiconductor structures as a basis for high-tech devices of modern nanoelectronics, together with some new results in this field. The possibility of creating “low-threshold” 2D lasers in Si₃N₄-GaAs and AlxGa₁₋ₓAs-GaAs layered heterostructures, in which a two-dimensional electron-hole plasma (EHP) is formed, has been analyzed. The investigations of optical amplification spectra in heterostructures with a two-dimensional quantum well have been performed in detail. It has been demonstrated that under the conditions of simultaneous co-existence of 3D-EHP and 2D-EHP, stimulated radiation is formed predominantly in 2D-EHP, with the laser excitation threshold at which optical amplification occurs in 2D-EHP by two orders of magnitude lower than in 3D-EHP, and the corresponding value of the coefficient of optical amplification is 2.5 times greater. A simple theoretical model of electron heating in a system with two valleys is applied to describe 2D semiconductor monolayers of the MoS₂ and WS₂ types. The model is demonstrated to describe sufficiently well the available experimental data on the negative differential conductance effect in a WS₂ monolayer. It confirms the possibility of fabricating Gunn diodes of a new and advanced EMW generation based on the structures concerned. These diodes are capable of generating frequencies of the order of 10 GHz and higher, which makes them attractive for HF practical applications. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Hetero- and low-dimensional structures 2D semiconductor structures as a basis for new high-tech devices (Review) Article published earlier |
| spellingShingle | 2D semiconductor structures as a basis for new high-tech devices (Review) Korbutyak, D.V. Lytovchenko, V.G. Strikha, M.V. Hetero- and low-dimensional structures |
| title | 2D semiconductor structures as a basis for new high-tech devices (Review) |
| title_full | 2D semiconductor structures as a basis for new high-tech devices (Review) |
| title_fullStr | 2D semiconductor structures as a basis for new high-tech devices (Review) |
| title_full_unstemmed | 2D semiconductor structures as a basis for new high-tech devices (Review) |
| title_short | 2D semiconductor structures as a basis for new high-tech devices (Review) |
| title_sort | 2d semiconductor structures as a basis for new high-tech devices (review) |
| topic | Hetero- and low-dimensional structures |
| topic_facet | Hetero- and low-dimensional structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215323 |
| work_keys_str_mv | AT korbutyakdv 2dsemiconductorstructuresasabasisfornewhightechdevicesreview AT lytovchenkovg 2dsemiconductorstructuresasabasisfornewhightechdevicesreview AT strikhamv 2dsemiconductorstructuresasabasisfornewhightechdevicesreview |