2D semiconductor structures as a basis for new high-tech devices (Review)
In this article, we present a short overview of the Ukrainian contribution to the physics of 2D semiconductor structures as a basis for high-tech devices of modern nanoelectronics, together with some new results in this field. The possibility of creating “low-threshold” 2D lasers in Si₃N₄-GaAs and A...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215323 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | 2D semiconductor structures as a basis for new high-tech devices (Review) / D.V. Korbutyak, V.G. Lytovchenko, M.V. Strikha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 380-386. — Бібліогр.: 20 назв. — англ. |