2D semiconductor structures as a basis for new high-tech devices (Review)

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2018
• Main Authors: Korbutyak, D.V., Lytovchenko, V.G., Strikha, M.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Subjects: Hetero- and low-dimensional structures
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215323
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: 2D semiconductor structures as a basis for new high-tech devices (Review) / D.V. Korbutyak, V.G. Lytovchenko, M.V. Strikha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 380-386. — Бібліогр.: 20 назв. — англ.

In this article, we present a short overview of the Ukrainian contribution to the physics of 2D semiconductor structures as a basis for high-tech devices of modern nanoelectronics, together with some new results in this field. The possibility of creating “low-threshold” 2D lasers in Si₃N₄-GaAs and A...