1/f noise and carrier transport mechanisms in InSb p⁺-n junctions
The dark current and 1/f noise spectra have been investigated in p⁺-n InSb junctions. The photodiodes were prepared by Cd diffusion into single-crystal substrates. The current-voltage characteristics have been explained within a model of an inhomogeneous p-n junction. The junction inhomogeneities ar...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215324 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 374-379. — Бібліогр.: 26 назв. — англ. |