1/f noise and carrier transport mechanisms in InSb p⁺-n junctions
The dark current and 1/f noise spectra have been investigated in p⁺-n InSb junctions. The photodiodes were prepared by Cd diffusion into single-crystal substrates. The current-voltage characteristics have been explained within a model of an inhomogeneous p-n junction. The junction inhomogeneities ar...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2018 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215324 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 374-379. — Бібліогр.: 26 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The dark current and 1/f noise spectra have been investigated in p⁺-n InSb junctions. The photodiodes were prepared by Cd diffusion into single-crystal substrates. The current-voltage characteristics have been explained within a model of an inhomogeneous p-n junction. The junction inhomogeneities are caused by dislocations crossing the depletion region. The correlation between the trap-assisted tunneling current through the local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The fluctuations of the junction resistance have been argued to be responsible for the origin of 1/f noise.
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| ISSN: | 1560-8034 |