1/f noise and carrier transport mechanisms in InSb p⁺-n junctions
The dark current and 1/f noise spectra have been investigated in p⁺-n InSb junctions. The photodiodes were prepared by Cd diffusion into single-crystal substrates. The current-voltage characteristics have been explained within a model of an inhomogeneous p-n junction. The junction inhomogeneities ar...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2018 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215324 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 374-379. — Бібліогр.: 26 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862542772083359744 |
|---|---|
| author | Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Trotsenko, S.P. |
| author_facet | Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Trotsenko, S.P. |
| citation_txt | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 374-379. — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The dark current and 1/f noise spectra have been investigated in p⁺-n InSb junctions. The photodiodes were prepared by Cd diffusion into single-crystal substrates. The current-voltage characteristics have been explained within a model of an inhomogeneous p-n junction. The junction inhomogeneities are caused by dislocations crossing the depletion region. The correlation between the trap-assisted tunneling current through the local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The fluctuations of the junction resistance have been argued to be responsible for the origin of 1/f noise.
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| first_indexed | 2026-03-23T18:47:44Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215324 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:47:44Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Trotsenko, S.P. 2026-03-12T08:55:03Z 2018 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 374-379. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS: 73.40.Gk, 73.40.Kp https://nasplib.isofts.kiev.ua/handle/123456789/215324 https://doi.org/10.15407/spqeo21.04.374 The dark current and 1/f noise spectra have been investigated in p⁺-n InSb junctions. The photodiodes were prepared by Cd diffusion into single-crystal substrates. The current-voltage characteristics have been explained within a model of an inhomogeneous p-n junction. The junction inhomogeneities are caused by dislocations crossing the depletion region. The correlation between the trap-assisted tunneling current through the local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The fluctuations of the junction resistance have been argued to be responsible for the origin of 1/f noise. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions Article published earlier |
| spellingShingle | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Trotsenko, S.P. Semiconductor physics |
| title | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions |
| title_full | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions |
| title_fullStr | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions |
| title_full_unstemmed | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions |
| title_short | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions |
| title_sort | 1/f noise and carrier transport mechanisms in insb p⁺-n junctions |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215324 |
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