1/f noise and carrier transport mechanisms in InSb p⁺-n junctions
The dark current and 1/f noise spectra have been investigated in p⁺-n InSb junctions. The photodiodes were prepared by Cd diffusion into single-crystal substrates. The current-voltage characteristics have been explained within a model of an inhomogeneous p-n junction. The junction inhomogeneities ar...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2018 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Цитувати: | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 374-379. — Бібліогр.: 26 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860479656828862464 |
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| author | Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Trotsenko, S.P. |
| author_facet | Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Trotsenko, S.P. |
| citation_txt | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 374-379. — Бібліогр.: 26 назв. — англ. |
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| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The dark current and 1/f noise spectra have been investigated in p⁺-n InSb junctions. The photodiodes were prepared by Cd diffusion into single-crystal substrates. The current-voltage characteristics have been explained within a model of an inhomogeneous p-n junction. The junction inhomogeneities are caused by dislocations crossing the depletion region. The correlation between the trap-assisted tunneling current through the local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The fluctuations of the junction resistance have been argued to be responsible for the origin of 1/f noise.
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| first_indexed | 2026-03-23T18:47:44Z |
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ISSN 1560-8034, 1605-6582 (On-line), SPQEO, 2018. V. 21, N 4. P. 374-379.
© 2018, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
374
Semiconductor physics
1/f noise and carrier transport mechanisms in InSb p
+
-n junctions
V.V. Tetyorkin
1*
, A.V. Sukach
1
, A.I. Tkachuk
2
, S.P. Trotsenko
1
1
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03680 Kyiv, Ukraine
*
E-mail: teterkin@isp.kiev.ua
2
V. Vynnychenko Central Ukrainian State Pedagogical University, 25006 Kropyvnytskyi, Ukraine
Abstract. The dark current and 1/f noise spectra have been investigated in p
+
-n InSb
junctions. The photodiodes were prepared by Cd diffusion into single crystal substrates.
The current-voltage characteristics have been explained within a model of inhomogeneous
p-n junction. The junction inhomogeneities are caused by dislocations crossing the
depletion region. The correlation between the trap-assisted tunneling current through the
local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The
fluctuations of the junction resistance have been argued to be responsible for the origin of
1/f noise.
Keywords: InSb, infrared spectrum, p-n junction, trap-assisted tunneling, 1/f noise.
doi: https://doi.org/10.15407/spqeo21.04.374
PACS 73.40.Gk, 73.40.Kp
Manuscript received 30.10.18; revised version received 26.11.18; accepted for publication
29.11.18; published online 03.12.18.
1. Introduction
Now InSb is one of the most important materials for
manufacturing photodiodes as well as photodiode focal
plane arrays for middle wavelength infrared region λ = 3-
5 µm [1]. The commonly used techniques to produce
InSb photodiodes are Be implantation and Cd diffusion
into bulk crystals of n-type conductivity. The
performance of these photodiodes is essentially limited
by excess current through the traps in the gap. The traps
can act as effective recombination centers as well as can
enhance interband tunneling, giving rise to excess dark
current. The careful analysis of carrier transport
mechanisms at medium and moderately large reverse
bias voltages has been made in p
+
-n junctions prepared
using Cd diffusion into bulk crystals [2-5]. It was shown
that the total dark current suffer from trap-assisted
tunneling (TAT) and surface leakage phenomena. Also,
the dark current is dependent critically on the conditions
of the diffusion process.
The nature of low-frequency 1/f noise in InSb still
remains the problem under investigation. It was treated
both as bulk and surface phenomena [6-18].
Experimental data on low-frequency noise in InSb
photodiodes are contradictory. For instance, published in
literature the Hooge parameter values vary within the
large range from 10
–1
down to 10
–6
[13-15, 18].
The aim of this work was to investigate the dark
current and 1/f noise in InSb diffusion p
+
-n junctions in
order to clarify both carrier transport and noise
mechanisms as well as to find possible correlation
between them.
2. Device processing and measurement techniques
The starting materials were undoped and Te doped single
crystals of n-InSb with the electron concentration within
the range 10
14
…10
15
cm
–3
. The dislocation density in the
substrates was of the order of 10
2
cm
2
. Earlier, we
developed three methods of cadmium diffusion into n-
InSb substrates labeled as TR1, TR2 and TR3 [5]. It was
shown that the best parameters of diffusion p-n junctions
were implemented in two-stage diffusion technique,
when after isothermal diffusion of Cd at 380 °C the
thermal annealing at 420 °C was carried out for 60 min in
a separate ampoule. The worse data were obtained for the
isothermal diffusion at 420 °C for 30 min. Like to the
previous investigations, the mesa structures with an
active area 1.2·10
–2
cm
2
were delineated by chemical
etching. Ohmic contacts to p- and n-type regions of the
junctions were prepared using In-Zn alloy and pure In,
respectively. Formation of ohmic contacts and
purification of mesas was carried out in a hydrogen
atmosphere at ~350 °C for 5 to 10 min. Thin
polycrystalline films of CdTe were used as passivative
and protective layers due to good agreement between
lattice parameters and thermal expansion coefficients of
CdTe and InSb.
The current-voltage and high-frequency (1 MHz)
capacitance-voltage characteristics were measured as a
function of bias voltage and temperature. The noise
spectra were investigated within the frequency range of
5…2·10
4
Hz at 77 K. The measuring set up consisted of a
transimpedance amplifier and a spectrum analyzer
CK4-74. The transimpedance amplifier is essentially
SPQEO, 2018. V. 21, N 4. P. 374-379.
Tetyorkin V.V., Sukach A.V., Tkachuk A.I., Trotsenko S.P. 1/f noise and carrier transport mechanisms in InSb …
375
Fig. 1. Current-voltage characteristics in forward biased (close
dots) and reverse biased (open dots) TR1 and TR3 junctions at
77 K.
a low-noise field-effect transistor operational amplifier
operating in a negative feedback current mode. The
requirements to operational amplifiers for photodiodes
A
3
B
5
with rather low dynamical resistance are discussed
in [19]. The developed amplifier allows correct
measurements of noise in the junctions with the dynamic
resistance >3 kOhm.
3. Results and discussion
In the investigated p-n junctions, the capacitance-voltage
characteristics are linearized in C
–3
-V coordinates
indicating formation of linearly graded structures. The
junction parameters such as the concentration gradient,
built-in voltage and the depletion region width were
determined from the C-V measurements.
The current-voltage characteristics measured in
representative p-n junctions prepared by different
diffusion techniques are shown in Fig. 1. It is necessary
to emphasize the following features of the obtained I-V
dependences. The junction prepared using TR3 method
exhibits the lowest dark current at low and moderate bias
voltages. At the same time, in the junction prepared using
TR1 method (hereafter TR1 and TR3 junctions) the
excess current at the forward bias voltages is clearly
observed, Fig. 1. Within the temperature range
77…160 K, the forward current-voltage characteristic of
the photodiode is expressed as
Fig. 2. Reverse I-V characteristics in TR1 junction at
temperatures, K: 77 (1), 89 (2), 120 (3), 138 (4), 156 (5).
( ) ( )
β
−
+
−
=
kT
IRUe
I
E
IRUe
II ss expexp 02
0
01 , (1)
where E0 = 29 meV is the characteristic energy. Other
parameters in the equation (1) are shown in Table [5].
The I-V characteristic of the junction TR3 is described by
the second term in (1). The junction parameters shown in
Table indicate that the forward current in TR3 junction is
composed of diffusion and recombination currents,
whereas in TR2 junction it is mainly limited by tunneling
current at small biases and recombination current at
higher biases.
Table. Parameters of diffusion InSb p-n junctions at Т = 77 K
[5].
D
if
fu
si
o
n
m
et
h
o
d
I 0
1
,
A
R
0
A
,
O
h
m
·c
m
2
I 0
2
,
A
β
a,
c
m
–
4
W
0
, µ
m
τ 0
,
s
TR1
TR2
TR3
1.3×
×10–6
8.4×
×10–8
–
6.8×
×102
1.4×
×103
3.5×
×104
2.2×
×10–7
5.0×
×10–8
4.0×
×10–9
2.7
2.1
1.6
2.3×1019
1.3×1019
8.5×1018
1.0
1.1
1.3
1.6×
×10–9
7.9×
×10–9
1.2×
×10–7
SPQEO, 2018. V. 21, N 4. P. 374-379.
Tetyorkin V.V., Sukach A.V., Tkachuk A.I., Trotsenko S.P. 1/f noise and carrier transport mechanisms in InSb …
376
Fig. 3. Resistance-area product in TR1 (open dots) and TR3
(close dots) junctions at 77 K.
The reverse I-U characteristics measured in TR1
junction within the temperature range 77…156 K are
shown in Fig. 2. They are approximated by the power
dependence I ~ U
m
. At temperatures T < 120 K and bias
voltages U ≤ 0.2 V, the sublinear I-U dependences with
the exponent m ≅ 0.8 are observed. At higher
temperatures (curves 4, 5) m ≅ 0.7…0.8 for bias voltages
U ≤ 0.03 V and m equals approximately 0.3 for higher
voltages 0.04 < U ≤ 0.2. The reverse current tends to
saturation, which is typical for the thermal generation
mechanism of carrier transport in homogeneous p-n
junctions. With the reverse bias increase, the current
increases and m varies from 2-3 at U = 1…2 V up to
4.5…5.0 at higher biases. It must be pointed out that the
reverse current varies within approximately three orders
of magnitude over the temperature range 77…156 K.
Shown in Fig. 3 are voltage dependences of the
differential resistance-area product (RA) at the
temperature 77 K. Note that the RA(U) dependence in
TR1 junction is peaked at the forward bias, whereas in
TR3 junction it has maximal value at the reverse bias of
approximately 50 mV.
Noise spectra in the investigated junctions are
shown in Figs. 4 and 5. All spectra were measured at
77 K for the reverse bias voltage –10 mV. As seen, the
spectra are of the form 1/f at the frequencies f ≤ 2·10
2
Hz
in TR3 junction. In TR1 junction, the 1/f noise dominates
in the whole range of the measuring frequencies. Note
also the weak temperature dependence of the noise
current in TR1 junction.
Fig. 4. Noise spectra measured in TR3 junction measured at the
reverse bias -10 mV, T = 77 K.
f, Hz
Fig. 5. Noise spectra in TR1 junction measured at the reverse
bias –10 mV, T = 77 K. The inset shows the dependence of the
noise current on temperature.
It is known that tunneling at forward bias in a
junction composed of non-degenerate semiconductors is
possible only if dissipation of energy is involved, due to
the bottom of the conduction band of the n-type side of
the junction is higher than the top of the valence band in
I n
,
A
/H
z
1
/2
U, mV f, Hz
I n
,
A
/H
z
1
/2
I n
,
A
/H
z
1
/2
R
A
,
O
h
m
·c
m
2
SPQEO, 2018. V. 21, N 4. P. 374-379.
Tetyorkin V.V., Sukach A.V., Tkachuk A.I., Trotsenko S.P. 1/f noise and carrier transport mechanisms in InSb …
377
the p-type side. Localized defect states in the forbidden
gap may provide a path for carrier transport across the
junction. However, this process is not efficient for a
single level of the localized states in the gap. A
multisteps tunneling-recombination model has been
proposed by Riben and Feucht to describe tunneling
currents in forward bias in Ge-GaAs heterojunctions
[20]. It is important to note that for the multistep
tunneling-recombination process the traps in the gap
should be uniformly distributed in energy and space.
Moreover, this process is possible only if the trapping
levels density is sufficiently high.
In order to explain the excess current in the reverse-
biased infrared photodiodes, a model of the TAT current
in homogeneous p-n junctions was developed [21, 22].
Based on this model, the carrier transport mechanisms
were explained in CdxHg1–xTe photodiodes (x =
0.2…0.3). However, attempts to explain experimental I-V
characteristics in InAs and InSb junctions by this model
were failed due to low electric field strength in the
depletion region. For this reason, the model of
inhomogeneous junction was proposed in order to
explain experimental I-V dependences in InAs [2, 3]. The
local inhomogeneities were proved to be related to
dislocations or other extended defects. The stress field
around dislocations is known to be responsible for
segregation of foreign impurities and native point defects
thus forming the so-called Cottrell atmospheres. It was
shown that the electric field in the inhomogeneous
regions of the junction may be two orders of magnitude
higher than that in the homogeneous part of the junction.
Thus, these regions can provide effective paths for the
tunneling transition of carriers. The generation current
flows through the homogeneous region of the junction
free of dislocations. Further analysis of experimental data
in InSb and InAs p-n junctions revealed that
inhomogeneities are responsible for the tunneling current
at both reverse and forward biases [2, 3]. The possible
reason for the higher concentration of extended defects in
TR1 junctions may be retrograde solubility of cadmium
in InSb [5].
Because of the TAT current in the investigated
junctions is related to inhomogeneities in the depletion
region, one can suggest that 1/f noise arises due to
fluctuations in the junction resistance. It should be
pointed out that tunneling current in a semiconductor p-n
junction has a strong (exponential) dependence on the
electric field. So, small fluctuation in the concentration of
defects results in exponentially large fluctuation in the
tunneling current and, therefore, in the junction
resistance. This fact is especially important for IR
photodiodes due to several reasons. First, because the
photodiodes are made of narrow-gap semiconductors
potential barriers have rather low height. Second,
electrons and holes have small effective masses. Third,
technology of the starting materials is less mature in
comparison with widely used Si and GaAs. Obviously,
the resistance fluctuations are more pronounced in TR1
junctions due to the diffusion method used for their
preparation. The weak dependence of the noise current
on the temperature in Fig. 4 is in favour of the proposed
model of 1/f noise.
The resistivity fluctuations responsible for the
origin of 1/f noise in semiconductors can arise due to
fluctuations of mobility and number of carriers. So, two
models of 1/f noise were mainly discussed: the Hooge
model assuming mobility fluctuations and the
McWhorter model assuming number fluctuations [23-
25].
In the Hooge model, the noise spectra of 1/f type are
represented by the equation [23]
Nf
I
SI γ
α
=
2
, (2)
where γ is close to unity, N is the number of carriers in
the system, α = 2.3·10
–3
is the so-called Hooge
parameter. The 1/f noise in infrared photodiodes has been
theoretically analyzed in [11, 23-25, 26]. Relations for
the magnitude of the 1/f noise based on the Hooge model
were obtained by Kleinpenning for several types of
diodes, including diffusion and GR current dominated
diodes, long and short diodes, and illuminated
photodiodes [23, 24]. If the dark current is dominated by
generation and recombination of carriers in the depletion
region, the spectral density of noise is expressed as
−
τ
α
=
=
−
−
τ
α
=
kT
qV
f
qI
kT
qV
kT
qV
f
qI
S I
2
exp1
3
2
2
exp1
2
exp
3
2
0
2
0
0
(3)
where
0
2
0
τ
WAqn
I i= (4)
is the generation current in the reverse biased diode. The
noise current spectra were calculated for the parameters
of Table 1. In order to adjust the noise current calculated
using the formula (3) to the experimentally measured one
shown in Figs. 4 and 5, the Hooge parameter α should be
dependent on the dark current. By using the junction
parameters listed in Table, it was found that α is of the
order of 10
–4
and 10
–5
in TR1 and TR3 junctions,
respectively.
The fluctuations of the junction resistance may be
also caused by capture of carriers into traps and emission
from them. In the case when trapping levels are
distributed in the gap and have a wide range of time
constants, these traps may be responsible for 1/f noise
SPQEO, 2018. V. 21, N 4. P. 374-379.
Tetyorkin V.V., Sukach A.V., Tkachuk A.I., Trotsenko S.P. 1/f noise and carrier transport mechanisms in InSb …
378
[15]. Hence, a multisteps tunneling-recombination model
proposed by Riben and Feucht [20] may be used for
explanation of 1/f noise in the forward-biased junctions.
However, as shown by Lukyanchikova [26] this model
was not proved experimentally.
4. Conclusions
The current-voltage characteristics, differential resistance
and noise spectra have been measured in InSb p
+
-n-type
junctions. It has been found that generation in the
depletion region and trap-assisted tunneling are dominant
carrier transport mechanisms at reverse bias voltages.
The 1/f noise measured at low reverse bias can be
attributed to fluctuations of the junction resistance.
Obviously, the performance of InSb photodiodes is
critically dependent of structural and electrical
uniformity of the junction n-region.
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SPQEO, 2018. V. 21, N 4. P. 374-379.
Tetyorkin V.V., Sukach A.V., Tkachuk A.I., Trotsenko S.P. 1/f noise and carrier transport mechanisms in InSb …
379
Authors and CV
Volodymyr V. Tetyorkin: Doctor of
Sciences in Physics and Mathematics,
Head of the Laboratory of Infrared
Semiconductor Photoelectronics at
the V. Lashkaryov Institute of
Semiconductor Physics, NAS of
Ukraine. The area of scientific
interests includes physics, technology and application of
narrow-gap semiconductors and infrared devices.
V. Lashkaryov Institute of Semiconductor Physics, NAS
of Ukraine
Andriy V. Sukach: Senior Scientist
at the Department of Semiconductor
Chemistry, V. Lashkaryov Institute of
Semiconductor Physics, NAS of
Ukraine. The area of scientific
interests includes physics and
technology of infrared sensors
V. Lashkaryov Institute of Semiconductor Physics, NAS
of Ukraine.
Andriy I. Tkachuk: assistant
professor at the V. Vynnychenko
Central Ukrainian State Pedagogical
University, Kropyvnytskyi, Ukraine.
The area of scientific interests
includes physics and technology of
infrared devices.
V. Vynnychenko Central Ukrainian
State Pedagogical University,
Kropyvnytskyi, Ukraine.
Stepan P. Trotsenko: graduated from
the Taras Shevchenko National
University of Ukraine in 2014 and
postgraduate study at the
V. Lashkaryov Institute of
Semiconductor Physics, NAS of
Ukraine.
Currently, he joined to the Laboratory
of Infrared Semiconductor Photoelectronics at the
V. Lashkaryov Institute of Semiconductor Physics, NAS
of Ukraine.
|
| id | nasplib_isofts_kiev_ua-123456789-215324 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:47:44Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Trotsenko, S.P. 2026-03-12T08:55:03Z 2018 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 374-379. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS: 73.40.Gk, 73.40.Kp https://nasplib.isofts.kiev.ua/handle/123456789/215324 https://doi.org/10.15407/spqeo21.04.374 The dark current and 1/f noise spectra have been investigated in p⁺-n InSb junctions. The photodiodes were prepared by Cd diffusion into single-crystal substrates. The current-voltage characteristics have been explained within a model of an inhomogeneous p-n junction. The junction inhomogeneities are caused by dislocations crossing the depletion region. The correlation between the trap-assisted tunneling current through the local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The fluctuations of the junction resistance have been argued to be responsible for the origin of 1/f noise. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions Article published earlier |
| spellingShingle | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Trotsenko, S.P. Semiconductor physics |
| title | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions |
| title_full | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions |
| title_fullStr | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions |
| title_full_unstemmed | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions |
| title_short | 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions |
| title_sort | 1/f noise and carrier transport mechanisms in insb p⁺-n junctions |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215324 |
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