1/f noise and carrier transport mechanisms in InSb p⁺-n junctions

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2018
• Main Authors: Tetyorkin, V.V., Sukach, A.V., Tkachuk, A.I., Trotsenko, S.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Subjects: Semiconductor physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215324
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: 1/f noise and carrier transport mechanisms in InSb p⁺-n junctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 374-379. — Бібліогр.: 26 назв. — англ.

The dark current and 1/f noise spectra have been investigated in p⁺-n InSb junctions. The photodiodes were prepared by Cd diffusion into single-crystal substrates. The current-voltage characteristics have been explained within a model of an inhomogeneous p-n junction. The junction inhomogeneities ar...