Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates
In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy₂O₃ film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2018 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215326 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 360-364. — Бібліогр.: 21 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860479659926355968 |
|---|---|
| author | Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Berezovska, N.I. Lytvyn, O.S. Kapitanchuk, L.M. Svetlichnyi, A.M. |
| author_facet | Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Berezovska, N.I. Lytvyn, O.S. Kapitanchuk, L.M. Svetlichnyi, A.M. |
| citation_txt | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 360-364. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy₂O₃ film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with a composition close to the stoichiometric one. In this case, an increase in the RTA time leads to improving the quality of the film-substrate interface and increasing the optical transmission of Dy₂O₃/por-SiC/SiC structure.
|
| first_indexed | 2026-03-23T18:47:47Z |
| format | Article |
| fulltext |
ISSN 1560-8034, 1605-6582 (On-line), SPQEO, 2018. V. 21, N 4. P. 360-364.
© 2018, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
360
Semiconductor physics
Thin dysprosium oxide films formed by rapid thermal annealing
on porous SiC substrates
Yu.Yu. Bacherikov
1
, R.V. Konakova
1
, O.B. Okhrimenko
1, *
, N.I. Berezovska
2
, O.S. Lytvyn
3
, L.M. Kapitanchuk
4
,
A.M. Svetlichnyi
5
1
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
*
E-mail: olga@isp.kiev.ua
2
Taras Shevchenko Kyiv National University, Physics Department, Kyiv, Ukraine
3
Borys Grinchenko Kyiv University Kyiv, Ukraine
4
Paton Institute of Electric Welding, NAS of Ukraine, Kyiv, Ukraine
5
Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering, Southern Federal University,
Taganrog, Russia
Abstract. In this paper, we consider the effect of rapid thermal annealing (RTA) on the
properties of Dy2O3 film formed on the surface of a substrate with a por-SiC/SiC structure.
The atomic composition of the films under study was analyzed as a function of the RTA
time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with
a composition close to the stoichiometric one. In this case, an increase in the RTA time
leads to improving the quality of film-substrate interface and increasing the optical
transmission of Dy2O3/por-SiC/SiC structure.
Keywords: thin dysprosium oxide films, rapid thermal annealing, SiC substrates, interface,
porous layer.
doi: https://doi.org/10.15407/spqeo21.04.360
PACS 78.20.-e, 81.15.-z
Manuscript received 22.10.18; revised version received 19.11.18; accepted for publication
29.11.18; published online 03.12.18.
1. Introduction
Development of microelectronics necessitates the use of
materials that are characterized by high chemical and
thermal resistance, large values of dielectric constant (ε =
8…20) and specific resistance (ρ = 1013
…1016 Ω·cm),
such as rare-earth oxides (REO). As a rule, REO oxides
are used in metal–dielectric–semiconductor (MDS)
transistors, heat-resistant and effective antireflection and
passivating dielectric coatings for photoelectric devices
[1-3]. At the same time, REO have high transparency in
the visible spectral region, chemical and thermal
durability and have an optimal refractive index for these
purposes [4-7]. In addition, the use of two-layer dielectric
films such as REO–SiO2 in microelectronics allows
improving the electrical stability of MDS devices [1].
However, despite the large number of works devoted to
the study of the properties of rare-earth oxide films and
MDS systems obtained on their basis [2, 8-12], search
and development of new REO-semiconductor systems
remains topical task.
Modern requirements of microelectronics, related
with the miniaturization of devices, lead to the need to
take into account the physical limits of the minimum
permissible dimensions for materials used in MDS
structures. As it is known, a decrease in the thickness of
SiO2 traditionally used in silicon and silicon carbide
MDS structures up to 10…15 Å is accompanied by an
unacceptably high leakage current [10, 11]. A decrease in
leakage current through the gate dielectric is achieved by
replacing silicon dioxide with the so-called alternative
dielectrics (dielectrics with high dielectric constant –
high-k dielectrics) [10, 11]. The use of alternative
dielectrics allows to increase the physical thickness of the
dielectric and thus suppress the tunnel current [10, 11]. In
addition, when using REO as alternative oxides, the
absence of a “thick” disturbed transition oxide-substrate
layer is observed, which in the work [9] is associated
with relatively low temperatures for obtaining the
dielectric films based on rare-earth oxides that do not
cause significant mechanical stresses at the oxide –
substrate interface.
SPQEO, 2018. V. 21, N 4. P. 360-364.
Bacherikov Yu.Yu., Konakova R.V., Okhrimenko O.B., et al. Thin dysprosium oxide films formed by rapid thermal …
361
The structural, optical, and electrical characteristics
of REO films can significantly depend on the methods
and conditions of preparation, on following processing,
as well as on the type of substrates used [2]. So, for
example, depending on the method of oxidation in the
transition layer ‘a film of dysprosium oxide – silicon’,
formation of dysprosium pyrosilicates [13] is possible,
and the structure of the Dy2O3 itself can significantly
depend on the quality of the substrate [14, 15].
One way to decrease the value of mechanical
stresses at the oxide – substrate interface, as well as
reducing the influence of structural defects of a
semiconductor substrate, which penetrate during high
temperature process into a thin oxide film grown on this
substrate, is to create a porous interlayer between the
substrate and epitaxial layer [16, 17].
In this regard, the purpose of this work was to study
the characteristics of silicon carbide MDS structures with
dielectric films of dysprosium oxide Dy2O3 formed using
the RTA method on silicon carbide substrates with an
intermediate porous layer of por-SiC.
2. Samples and measurement techniques
To obtain the Dy2O3/por-SiC/SiC structure, first of all, a
por-SiC layer was obtained on the silicon carbide
substrate. Porous silicon carbide was created using the
anodic etching of silicon carbide in an aqueous-alcoholic
solution of hydrofluoric acid: H2O:HF:C2H5OH = 1:1:2,
the current density was 20 mA/cm2, the etching time was
5 min. Then, the material was processed in the
KNO3 + KOH etchant to open pores. Formation of the
oxide film Dy2O3 was carried out as follows. A
dysprosium film was deposited on the surface of porous
silicon carbide by using the thermal deposition method.
Then, samples of porous SiC with the deposited metal
film were annealed in vacuum at the temperature close to
850 °C for 8 min and after that were subjected to rapid
thermal annealing in dry oxygen atmosphere at the
temperature 400 °C for 1…5 s.
The absorption spectra were measured at room
temperature and recorded on a SPECORD UV VIS setup
within the region λ = 400-800 nm. In all the samples,
morphology of the coating was studied on an atomic
Fig. 1. Images of the surface of the Dy2O3/por-SiC/SiC structure obtained using AFM (a) and scanning electron microscopy (b).
The RTA time is 1 s (1), 5 s (2).
SPQEO, 2018. V. 21, N 4. P. 360-364.
Bacherikov Yu.Yu., Konakova R.V., Okhrimenko O.B., et al. Thin dysprosium oxide films formed by rapid thermal …
362
-100 -50 0 50 100
0
10
20
30
40
50
60
C
o
n
c
e
n
tr
a
ti
o
n
,
a
t%
Thickness, nm
C
O
Dy
Si
1)
-100 -50 0 50 100
0
10
20
30
40
50
60
C
o
n
c
e
n
tr
a
ti
o
n
,
a
t%
Thickness,nm
C
O
Dy
Si
2)
Fig. 2. Content of elements (in atomic percents) in the
Dy2O3/por-SiC/SiC samples. The RTA time is 1 s (1), 5 s (2).
force microscope (AFM) NanoScopeIIIa (DJ). The
atomic composition of the structures under study was
measured using the LAS-2000 Auger spectrometer with
the layer-by-layer etching of the samples with Ar ions
possessing the energy 1 keV.
3. Experimental results and discussion
The thickness of the oxide layers was determined by the
Auger spectroscopy method and was approximately
130…170 nm. The pore size determined using the
scanning electron microscopy method was 30 nm.
Fig. 1 shows images of the surface of the
Dy2O3/por-SiC/SiC structure obtained using AFM and
scanning electron microscopy.
As can be seen from Fig. 1, the oxide film has a
non-homogeneous character and granular structure. An
increase in the RTA time contributes to a decrease in the
grain size and formation of an oxide film with a more
homogeneous structure.
Fig. 2 shows the atomic profiles of the structures
formed by dysprosium oxides on a por-SiC/SiC substrate
in the region of the ‘oxide layer – substrate’ interface.
As it follows from the Auger spectrometry data
obtained in the process of growing the dysprosium
oxides, heat treatment allows to form uniformly thick
oxide layers of Dy2O3, the composition of which is close
to the stoichiometric one. As can be seen from Fig. 2, the
ratio of the Dy2O3 components formed on the SiC
substrate in the presence of a por-SiC buffer layer
practically corresponds to the stoichiometric composition
of the sesquialteral dysprosium oxide: NO/NDy ≈ 1.4
regardless of the oxidation time.
The observed changes in the composition of the
oxide phases in the near-boundary layers and their depth
are related to the conditions of oxide growth. As can be
seen from Fig. 2, the chemical composition of the
transition areas ‘oxide film – substrate’ differs from that
in the oxide bulk. An increase in the RTA time, like to
the case of erbium and titanium oxides formation [18-
21], leads to formation of a sharper interface ‘oxide film
– substrate’. This formation of the sharper interface
‘oxide film – substrate’ with increasing the RTA time is
most likely due to the fact that, with the RTA time
increasing, dysprosium silicates [13] formed in the
intermediate layer ‘oxide film – porous layer’ break
down.
Fig. 3 shows the transmission spectra of the
Dy2O3/por-SiC/SiC structures at different RTA times, as
well as the transmission spectrum of the 4H-SiC
substrate.
The minimum in the transmission spectrum of the
Dy2O3/por-SiC/SiC structures is caused by the presence
of nitrogen impurity in the 4H-SiC substrate (Fig. 2,
curve 3). The sharp decrease in the optical transmission
in the Dy2O3/por-SiC/SiC structures as compared to that
in 4H-SiC substrate is due to the presence of a porous
layer and occurs due to an increase in scattering in the
porous layer.
As seen from Fig. 3, an increase in the RTA time
also leads to an increase in optical transmission within
the spectral range 400…800 nm, as well as in the
Er2O3/por-SiC/SiC [20, 21] and TiO2/por-SiC/SiC
[18, 19] structures. The growth of optical transmission
for oxidized dysprosium films, as well as a decrease in
the thickness of the transition layer at the ‘oxide film –
substrate’ interface, is most likely caused by the same
reasons, namely: destruction of dysprosium silicates at
the interface [13], which correlates with the Auger
spectroscopy data.
300 400 500 600 700 800
0.00
0.05
0.10
0.15
0.20
2
3
1
T
ra
n
s
m
is
s
io
n
,
a
rb
.
u
n
.
Wavelength, nm
Fig. 3. Optical transmission spectra of the Dy2O3/por-SiC/SiC
structures. The RTA time is 1 s (1), 5 s (2), transmission
spectrum of the initial 4H-SiC substrate (3). The intensity of the
transmission spectra of the Dy2O3/por-SiC/SiC structures is
five-fold increased.
SPQEO, 2018. V. 21, N 4. P. 360-364.
Bacherikov Yu.Yu., Konakova R.V., Okhrimenko O.B., et al. Thin dysprosium oxide films formed by rapid thermal …
363
4. Conclusions
Thus, as seen from the experimental data, the RTA
method allows to obtain thin Dy oxide films with a
composition close to stoichiometric on the por-SiC – SiC
surface. At the same time, the increasing the RTA time
leads to improvement in the quality of the film-substrate
interface. In this case, the presence of a porous interlayer
between the substrate and epitaxial layer makes it
possible to reduce the influence of structural defects of
the semiconductor substrate and improve the quality of
the whole structure.
References
1. Rozhkov V.A., Rodionov M.A. Electrical properties
of metal – dysprosium oxide – gadolinium oxide-
silicon structures. Techn. Phys. Lett. 2004. 30, Issue
6. P. 494-496. DOI: 10.1134/1.1773347.
2. Lawniczak-Jablonska K., Dynowska E., Babushkina
N.V., Malyshev S.A., Romanova L.I., Heinonen M.,
Laiho T. Morphology of crystalline structure and
atomic bonds inside DyxOy films grown on Si.
KSUPS 2005: Extended abstracts: Synchrotron
Radiation in Natural Science. 2005. 4, No 1–2. P.
1PA04.
3. Kurmashev Sh.D., Vikulin I.M., Lenkov S.V.
Silicon MDP-structures with rare-earth elements
oxides as dielectric. Tekhnologia konstruirovanie v
electron. apparature. 2001. № 6. P. 6–8 (in
Russian).
4. Rodionov M.A., Rozhkov V.A, Pashin A.V. Silicon
passivated by two-layer insulating films of
ytterbium oxide and dysprosium oxide. Techn.
Phys. Lett. 2004. 30, No 6. P. 512–514. DOI:
10.1134/1.1773353.
5. Xin Song, Moon-Hwan Chang, Michael Pecht.
Rare-earth elements in lighting and optical
applications and their recycling. JOM. 2013. 65,
No. 10. P. 1276–1282. DOI: 10.1007/s11837-013-
0737-6.
6. Anoshin Yu.A., Petrov A.I., Rozhkov V.A.,
Romanenko N.N., Shalimova M.B. Rare-earth
oxide antireflection coatings for silicon
photoelectric devices. Pis’ma v ZhTF. 1992. 18, No.
10. P. 54–58 (in Russian).
7. Rozhkov V.A., Petrov A.I. Accumulation of charge
in silicon MIS-structures with dysprosium oxide
dielectrics under the influence of UV radiation.
Izvestia Vuzov. Fizika. 1994. № 7. P. 99–104 (in
Russian).
8. Mitrovic I.Z. and Hall S. Rare earth silicate
formation: A route towards high-k for the 22 nm
node and beyond. J. Telecommun. and Inform.
Technol. 2009. 4. P. 51–60.
9. Fedorenko Y.G., Sverdlova A.M., Malinin A. Study
of the dynamical characteristics of an insulator-
semiconductor interface. Semiconductors. 1998. 32,
Issue 11. P. 1190–1195.
10. Kingon A.I., Maria J.-P., Streiffor S.K. Alternative
dielectrics to silicon dioxide for memory and logic
devices. Nature. 2000. 406. P. 1032–1038.
11. Wilk G.D., Wallace R.M., Anthony J.M. High-k
gate dielectrics: Current status and materials
properties considerations. J. Appl. Phys. 2001. 89,
No 10. P.5243–5275.
12. Guryanov A.M., Pashin A.V., Latukhina N.V.,
Lebedev V.M. Components distribution in silicon
MIS-structures with dielectric films of rare-earth
elements oxides. Vestnik Samarskogo gos.
Universiteta. Yestestvennonauchnaia seria. 2006.
No 2(42). P. 147–154 (in Russian).
13. Babushkina N.V. The study of the composition of
dysprosium oxide films by IR spectroscopy method.
Pis’ma v ZhTF. 1994. 20, No. 4. P. 41–44 (in
Russian).
14. Babushkina N.V., Zhigulin D.V., Malyshev S.A.,
Vasil’iev Yu. B., Skrekoten’ N.A. Effect of
chemical treatment of silicon surface on the
composition of dysprosium oxide films. 5-th Intern.
Sci. Conf. “Materials and Structures of Modern
Electronics”, October 10-11, 2012, Minsk, Belarus’.
15. Alfian Noviyanto, Dang-Hyok Yoon. Rare-earth
oxide additives for the sintering of silicon carbide.
Diamond and Related Materials. 2013. 38. P. 124–
130.
16. Polupan G., Torchynska T.V. Surface phonons and
exciton–polariton coupling in SiC nanocrystals.
Thin Solid Films. 2010. 518, No 6. P. S208–S211.
17. Torchynska T.V., Díaz Cano A., Dybic M. et al.
Stimulation of excitonic and defect-related
luminescence in porous SiC. Physica B. 2006. 376–
377. P. 367–369.
18. Bacherikov Yu.Yu., Konakova R.V., Okhrimenko
O.B., Berezovska N.I., Kapitanchuk L.M.,
Svetlichnyi A.M. Optical properties of thin erbium
oxide films formed by rapid thermal annealing on
SiC substrates with different structures.
Semiconductor Physics, Quantum Electronics &
Optoelectronics. 2017. 20, No 4. P. 465–469. doi:
https://doi.org/10.15407/spqeo20.04.465.
19. Konakova R.V., Kolomys O.F., Lytvyn O.S.,
Okhrimenko O.B., Strelchuk V.V., Svetlichnyi
A.M., Linets L.G. Transformation of a SiC/por-
SiC/TiO2 structure during rapid thermal annealing.
Semiconductors. 2012. 46, Issue 9. P. 1221–1224.
DOI: 10.1134/S1063782612090114.
20. Berezovska N.I., Bacherikov Yu.Yu., Konakova
R.V., Okhrimenko O.B., Lytvyn O.S., Linets L.G.,
Svetlichnyi A.M. Characterization of porous silicon
carbide according to absorption and
photoluminescence spectra. Semiconductors. 2014.
48, No 8. P. 1028–1030.
21. Bacherikov Yu.Yu., Konakova R.V., Okhrimenko
O.B., Berezovska N.I., Kapitanchuk L.M.,
Svetlichnyi A.M. Svetlichnaya L.A. Effect of por-
SiC buffer layer on the parameters of thin Er2O3
layers on silicon carbide substrates. Mater. Sci. and
Eng. 2015. 81. P. 012019. doi:10.1088/1757-
899X/81/1/012019.
SPQEO, 2018. V. 21, N 4. P. 360-364.
Bacherikov Yu.Yu., Konakova R.V., Okhrimenko O.B., et al. Thin dysprosium oxide films formed by rapid thermal …
364
Authors and CV
Yuriy Yu. Bacherikov, born in 1960,
defended his Doctoral Dissertation in
Physics and Mathematics in 2010.
Leading scientific collaborator at
V. Lashkaryov Institute of
Semiconductor Physics, NAS of
Ukraine. Authored over 300 publica-
tions, 6 patent, 1 monograph. The area of his scientific
interests includes physics and applications of wide-band
semiconductor compounds and devices based on them.
V. Lashkaryov Institute of Semiconductor Physics, NAS
of Ukraine, Kyiv, Ukraine
Raisa V. Konakova Doctor of
science in Technical field. Professor
at Laboratory of Physical and
Technological Problems of Solid-
State Microwave Electronics, ISP of
NAS, Ukraine. Authored over 600
publications, 85 patents, 14 textbooks. The area of her
scientific interests includes physics, technology and
diagnostics of microwave semiconductor devices.
V. Lashkaryov Institute of Semiconductor Physics, NAS
of Ukraine, Kyiv, Ukraine
Olga B. Okhrimenko, Doctor of
science in Physics and Mathematics.
Leading senior researcher at
V. Lashkaryov Institute of
Semiconductor Physics, NAS of
Ukraine. Authored over 140
publications, 1 patent, 1 monograph.
The area of her scientific interests includes investigation
of the patterns and physical mechanisms of the formation
and rearrangement of the defect-impurity system of the
thin-film dielectric-semiconductor structures, depending
on the technology of obtaining, the composition of the
thin film, additional processing and the introduction of
buffer layers.
V. Lashkaryov Institute of Semiconductor Physics, NAS
of Ukraine, Kyiv, Ukraine
Nataliya I. Berezovska, PhD in
Physics and Mathematics. Senior
researcher at Experimental Physics
Division, Faculty of Physics, Kyiv
National Taras Shevchenko
University. Authored over 113
publications. The area of her scientific
interests includes fundamental and
applied problems in the field of spectroscopy of phonon,
exciton and plasmon states in crystals, nano-sized
semiconductor and metal structures. Recent studies deal
with the study of the mechanisms of self-organization of
quasi-perioidic structures on the surface of materials of
various types under the influence of femtosecond laser
radiation and the prospects of their application for
photovoltaics and sensorics.
Taras Shevchenko Kyiv National University, Physics
Department, Kyiv, Ukraine
Oksana S. Lytvyn, PhD in Physics
and Mathematics, Senior Researcher.
Head of Information technologies and
mathematic disciplines Chair of Borys
Grinchenko Kyiv University.
Authored over 200 publications, 2
patents. The area of her scientific interests includes
scanning probe microscopy diagnostic of physics and
mechanical surface properties of various materials (thin
films and low-dimensional systems, composite).
Borys Grinchenko Kyiv University Kyiv, Ukraine
Leonid M. Kapitanchuk. Researcher
at E.O. Paton Electric Welding
Institute, National Academy of
Science of Ukraine. Authored over 82
publications and 2 patents. The area
of his scientific interests includes
materials science, Auger electron
spectroscopy, X-ray spectroscopy.
Paton Institute of Electric Welding, NAS of Ukraine,
Kyiv, Ukraine
Aleksandr M. Svetlichnyi PhD in
Technical sciences. Associate
Professor at Institute of
Nanotechnologies, Electronics and
Equipment Engineering. Authored
over 300 publications, 30 patents, 6
textbooks. The area of his scientific
interests includes defects in the crystal structure of
semiconductors and their influence on the instrument
parameters, quality control of manufacturing processes of
integrated circuits on the noise characteristics, the
development of equipment and manufacturing processes
of integrated circuits on the basis of coherent (laser) and
non-coherent radiation sources.
Institute of Nanotechnologies, Electronics, and
Electronic Equipment Engineering, Southern Federal
University, Taganrog, Russia
|
| id | nasplib_isofts_kiev_ua-123456789-215326 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:47:47Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Berezovska, N.I. Lytvyn, O.S. Kapitanchuk, L.M. Svetlichnyi, A.M. 2026-03-12T08:55:52Z 2018 Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 360-364. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS: 78.20.-e, 81.15.-z https://nasplib.isofts.kiev.ua/handle/123456789/215326 https://doi.org/10.15407/spqeo21.04.360 In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy₂O₃ film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with a composition close to the stoichiometric one. In this case, an increase in the RTA time leads to improving the quality of the film-substrate interface and increasing the optical transmission of Dy₂O₃/por-SiC/SiC structure. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates Article published earlier |
| spellingShingle | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Berezovska, N.I. Lytvyn, O.S. Kapitanchuk, L.M. Svetlichnyi, A.M. Semiconductor physics |
| title | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates |
| title_full | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates |
| title_fullStr | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates |
| title_full_unstemmed | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates |
| title_short | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates |
| title_sort | thin dysprosium oxide films formed by rapid thermal annealing on porous sic substrates |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215326 |
| work_keys_str_mv | AT bacherikovyuyu thindysprosiumoxidefilmsformedbyrapidthermalannealingonporoussicsubstrates AT konakovarv thindysprosiumoxidefilmsformedbyrapidthermalannealingonporoussicsubstrates AT okhrimenkoob thindysprosiumoxidefilmsformedbyrapidthermalannealingonporoussicsubstrates AT berezovskani thindysprosiumoxidefilmsformedbyrapidthermalannealingonporoussicsubstrates AT lytvynos thindysprosiumoxidefilmsformedbyrapidthermalannealingonporoussicsubstrates AT kapitanchuklm thindysprosiumoxidefilmsformedbyrapidthermalannealingonporoussicsubstrates AT svetlichnyiam thindysprosiumoxidefilmsformedbyrapidthermalannealingonporoussicsubstrates |