Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates
In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy₂O₃ film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2018 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215326 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 360-364. — Бібліогр.: 21 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862715140050255872 |
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| author | Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Berezovska, N.I. Lytvyn, O.S. Kapitanchuk, L.M. Svetlichnyi, A.M. |
| author_facet | Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Berezovska, N.I. Lytvyn, O.S. Kapitanchuk, L.M. Svetlichnyi, A.M. |
| citation_txt | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 360-364. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy₂O₃ film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with a composition close to the stoichiometric one. In this case, an increase in the RTA time leads to improving the quality of the film-substrate interface and increasing the optical transmission of Dy₂O₃/por-SiC/SiC structure.
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| first_indexed | 2026-03-23T18:47:47Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215326 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:47:47Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Berezovska, N.I. Lytvyn, O.S. Kapitanchuk, L.M. Svetlichnyi, A.M. 2026-03-12T08:55:52Z 2018 Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 360-364. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS: 78.20.-e, 81.15.-z https://nasplib.isofts.kiev.ua/handle/123456789/215326 https://doi.org/10.15407/spqeo21.04.360 In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy₂O₃ film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with a composition close to the stoichiometric one. In this case, an increase in the RTA time leads to improving the quality of the film-substrate interface and increasing the optical transmission of Dy₂O₃/por-SiC/SiC structure. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates Article published earlier |
| spellingShingle | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Berezovska, N.I. Lytvyn, O.S. Kapitanchuk, L.M. Svetlichnyi, A.M. Semiconductor physics |
| title | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates |
| title_full | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates |
| title_fullStr | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates |
| title_full_unstemmed | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates |
| title_short | Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates |
| title_sort | thin dysprosium oxide films formed by rapid thermal annealing on porous sic substrates |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215326 |
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