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Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates

In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy₂O₃ film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2018
Hauptverfasser:	Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B., Berezovska, N.I., Lytvyn, O.S., Kapitanchuk, L.M., Svetlichnyi, A.M.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215326
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 360-364. — Бібліогр.: 21 назв. — англ.

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