Buchumschlag

Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates

In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy₂O₃ film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2018
Hauptverfasser:	Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B., Berezovska, N.I., Lytvyn, O.S., Kapitanchuk, L.M., Svetlichnyi, A.M.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215326
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 360-364. — Бібліогр.: 21 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Ähnliche Einträge

Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates
von: Yu. Yu. Bacherikov, et al.
Veröffentlicht: (2018)

Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
von: Bacherikov, Yu.Yu., et al.
Veröffentlicht: (2017)

Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates
von: Bacherikov, Yu.Yu., et al.
Veröffentlicht: (2018)

Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates
von: Yu. Yu. Bacherikov, et al.
Veröffentlicht: (2018)

Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
von: Yu. Yu. Bacherikov, et al.
Veröffentlicht: (2017)

Conductivity of molecular semiconductor material based on monomeric and polymeric methacroylacetophenone
von: Berezhnytska, O.S., et al.
Veröffentlicht: (2019)

Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures
von: Bacherikov, Yu.Yu., et al.
Veröffentlicht: (2002)

Self-organization in irradiated semiconductor crystals caused by thermal annealing
von: Zavada, M., et al.
Veröffentlicht: (2018)

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes
von: Latreche, A.
Veröffentlicht: (2019)

Calculation of spin-Hamiltonian constants for extended defects (Vsᵢ-Vc)⁰ (Ky5) in silicon carbide polytype 3C-SiC
von: Shanina, B.D., et al.
Veröffentlicht: (2018)

Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review)
von: Sachenko, A.V., et al.
Veröffentlicht: (2018)

Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films
von: Bacherikov, Yu.Yu., et al.
Veröffentlicht: (2012)

Investigation of SiC films obtained on a porous-Si/Si substrate
von: V. V. Kidalov, et al.
Veröffentlicht: (2024)

Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes
von: Romanets, P.M., et al.
Veröffentlicht: (2019)

Method for data processing in application to ohmic contacts
von: Belyaev, A.E., et al.
Veröffentlicht: (2019)

Study of postimplantation annealing of SiC
von: Avramenko, S.F., et al.
Veröffentlicht: (2001)

Account of surface contribution to the thermodynamic properties of lead selenide films
von: Nykyruy, L.I., et al.
Veröffentlicht: (2019)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
von: Vinoslavskii, M.M., et al.
Veröffentlicht: (2018)

Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
von: Venger, E.F., et al.
Veröffentlicht: (1999)

Features of electrochemical processes at the boundary p-GaAs-HF water solution
von: Pashchenko, G.A., et al.
Veröffentlicht: (2018)

Four-particle formalism of the CDW method in two-electron charge-exchange reactions
von: Lazur, V.Yu., et al.
Veröffentlicht: (2020)

Taking the Coulomb effects into account in the reactions of one-electron charge exchange
von: Lazur, V.Yu., et al.
Veröffentlicht: (2019)

Synthesis and characterisation of new potassium-containing argyrodite-type compounds
von: Studenyak, I.P., et al.
Veröffentlicht: (2019)

Preparation and electrical properties of composites based on (Cu₆PS₅I)₁₋ₓ(Cu₇PS₆)ₓ mixed crystals
von: Izai, V.Yu., et al.
Veröffentlicht: (2019)

Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing
von: Okhrimenko, O.B.
Veröffentlicht: (2014)

Model research of phonon spectra of argyrodites family
von: Nebola, I.I., et al.
Veröffentlicht: (2018)

Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals
von: Gaidar, G.P.
Veröffentlicht: (2018)

Condensons and bicondensons in a one-dimensional systems
von: Kashirina, N.I., et al.
Veröffentlicht: (2018)

Influence of inter-electron scattering on the form of the non-equilibrium distribution function of band carriers
von: Boiko, I.I.
Veröffentlicht: (2018)

Inversion of spin levels in exchange-coupled pairs under combined time reversal
von: Geru, I.I.
Veröffentlicht: (2018)

The phenomenon of magnetic exchange bias in ferromagnetic nanocomposites grown by electron beam evaporation
von: Radchenko, M.V., et al.
Veröffentlicht: (2018)

1/f noise and carrier transport mechanisms in InSb p⁺-n junctions
von: Tetyorkin, V.V., et al.
Veröffentlicht: (2018)

Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures
von: Yurkovych, N.V., et al.
Veröffentlicht: (2018)

Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂
von: Bletskan, D.I., et al.
Veröffentlicht: (2018)

Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan
von: Konchits, A.A., et al.
Veröffentlicht: (2018)

Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields
von: Syngaivska, G.I., et al.
Veröffentlicht: (2018)

Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface
von: Tatyanenko, N.P., et al.
Veröffentlicht: (2018)

Cyclotron radiation of semiconductor crystals
von: Milenin, G.V., et al.
Veröffentlicht: (2018)

Influence of the mirror image forces on dispersion and phonon acoustic mode width of quasi-Rayleigh wave interacting with the adsorbed atoms
von: Seneta, M.Ya., et al.
Veröffentlicht: (2018)

Electron and hole effective masses in heavily boron-doped silicon nanostructures determined using cyclotron resonance experiments
von: Savchenko, D.V., et al.
Veröffentlicht: (2018)