Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂
It was performed the systematic investigation of the chemical modification regularities of electronic structure at the composition changes of “ideal” 2H-SnS₂ crystal was performed by using the self-consistent density functional theory method in the supercell model. The phases obtained during doping...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2018 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215327 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ / D.I. Bletskan, V.V. Frolova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 345-359. — Бібліогр.: 36 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862556237625819136 |
|---|---|
| author | Bletskan, D.I. Frolova, V.V. |
| author_facet | Bletskan, D.I. Frolova, V.V. |
| citation_txt | Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ / D.I. Bletskan, V.V. Frolova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 345-359. — Бібліогр.: 36 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | It was performed the systematic investigation of the chemical modification regularities of electronic structure at the composition changes of “ideal” 2H-SnS₂ crystal was performed by using the self-consistent density functional theory method in the supercell model. The phases obtained during doping the sulfur sublattice by substitutional impurity Y→S (Y = Cl, I), as well as during changing tin disulfide structure due to the appearance of atomic vacancies in cation and anion sublattices (non-stoichiometry effects), were analyzed.
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| first_indexed | 2026-03-23T18:47:46Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215327 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:47:46Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bletskan, D.I. Frolova, V.V. 2026-03-12T08:55:56Z 2018 Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ / D.I. Bletskan, V.V. Frolova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 345-359. — Бібліогр.: 36 назв. — англ. 1560-8034 PACS: 61.72.J-, 61.72.-y, 71.38.-k, 72.40.+w https://nasplib.isofts.kiev.ua/handle/123456789/215327 https://doi.org/10.15407/spqeo21.04.345 It was performed the systematic investigation of the chemical modification regularities of electronic structure at the composition changes of “ideal” 2H-SnS₂ crystal was performed by using the self-consistent density functional theory method in the supercell model. The phases obtained during doping the sulfur sublattice by substitutional impurity Y→S (Y = Cl, I), as well as during changing tin disulfide structure due to the appearance of atomic vacancies in cation and anion sublattices (non-stoichiometry effects), were analyzed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ Article published earlier |
| spellingShingle | Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ Bletskan, D.I. Frolova, V.V. Semiconductor physics |
| title | Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ |
| title_full | Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ |
| title_fullStr | Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ |
| title_full_unstemmed | Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ |
| title_short | Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ |
| title_sort | influence of intrinsic point defects and substitutional impurities (cl, i → s) on the electronic structure of 2h-sn₂ |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215327 |
| work_keys_str_mv | AT bletskandi influenceofintrinsicpointdefectsandsubstitutionalimpuritiesclisontheelectronicstructureof2hsn2 AT frolovavv influenceofintrinsicpointdefectsandsubstitutionalimpuritiesclisontheelectronicstructureof2hsn2 |