Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂
It was performed the systematic investigation of the chemical modification regularities of electronic structure at the composition changes of “ideal” 2H-SnS₂ crystal was performed by using the self-consistent density functional theory method in the supercell model. The phases obtained during doping...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2018 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215327 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ / D.I. Bletskan, V.V. Frolova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 345-359. — Бібліогр.: 36 назв. — англ. |