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Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂

It was performed the systematic investigation of the chemical modification regularities of electronic structure at the composition changes of “ideal” 2H-SnS₂ crystal was performed by using the self-consistent density functional theory method in the supercell model. The phases obtained during doping...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2018
Hauptverfasser:	Bletskan, D.I., Frolova, V.V.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215327
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ / D.I. Bletskan, V.V. Frolova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 345-359. — Бібліогр.: 36 назв. — англ.

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