Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields
We have studied the diffusion coefficient of hot electrons in GaN crystals under moderate electric (1...10 kV/cm) and magnetic (1…4 T) fields. Two configurations, parallel and crossed fields, have been analyzed. The study was carried out for compensated bulk-like GaN samples for various lattice temp...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215329 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields / G.I. Syngaivska, V.V. Koroteev, V.A. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 325-335. — Бібліогр.: 42 назв. — англ. |