Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields
We have studied the diffusion coefficient of hot electrons in GaN crystals under moderate electric (1...10 kV/cm) and magnetic (1…4 T) fields. Two configurations, parallel and crossed fields, have been analyzed. The study was carried out for compensated bulk-like GaN samples for various lattice temp...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2018 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
|
| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215329 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields / G.I. Syngaivska, V.V. Koroteev, V.A. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 325-335. — Бібліогр.: 42 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862711785667166208 |
|---|---|
| author | Syngaivska, G.I. Koroteev, V.V. Kochelap, V.A. |
| author_facet | Syngaivska, G.I. Koroteev, V.V. Kochelap, V.A. |
| citation_txt | Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields / G.I. Syngaivska, V.V. Koroteev, V.A. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 325-335. — Бібліогр.: 42 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We have studied the diffusion coefficient of hot electrons in GaN crystals under moderate electric (1...10 kV/cm) and magnetic (1…4 T) fields. Two configurations, parallel and crossed fields, have been analyzed. The study was carried out for compensated bulk-like GaN samples for various lattice temperatures (30…300 K) and impurity concentrations (10¹⁶…10¹⁷ cm⁻³). We found that at low lattice temperatures and low impurity concentrations, electric-field dependences of the transversal-to-current components of the diffusion tensor are non-monotonic for both configurations, while diffusion processes are mainly controlled by the magnetic field. With increasing the lattice temperature or impurity concentration, the behaviour of the diffusion tensor becomes more monotonous and less affected by the magnetic field. We showed that this behaviour of the diffusion processes is caused by the distinct kinetics of hot electrons in polar semiconductors with strong electron – optical phonon coupling. We have suggested that measurements of the diffusion coefficient of electrons subjected to electric and magnetic fields facilitate the identification of features of different electron transport regimes and the development of more efficient devices and practical applications.
|
| first_indexed | 2026-03-23T18:47:48Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215329 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:47:48Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Syngaivska, G.I. Koroteev, V.V. Kochelap, V.A. 2026-03-12T08:56:07Z 2018 Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields / G.I. Syngaivska, V.V. Koroteev, V.A. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 325-335. — Бібліогр.: 42 назв. — англ. 1560-8034 PACS: 72.20.Ht, 72.20.Dp, 73.23.-b, 85.35.-p https://nasplib.isofts.kiev.ua/handle/123456789/215329 https://doi.org/10.15407/spqeo21.04.325 We have studied the diffusion coefficient of hot electrons in GaN crystals under moderate electric (1...10 kV/cm) and magnetic (1…4 T) fields. Two configurations, parallel and crossed fields, have been analyzed. The study was carried out for compensated bulk-like GaN samples for various lattice temperatures (30…300 K) and impurity concentrations (10¹⁶…10¹⁷ cm⁻³). We found that at low lattice temperatures and low impurity concentrations, electric-field dependences of the transversal-to-current components of the diffusion tensor are non-monotonic for both configurations, while diffusion processes are mainly controlled by the magnetic field. With increasing the lattice temperature or impurity concentration, the behaviour of the diffusion tensor becomes more monotonous and less affected by the magnetic field. We showed that this behaviour of the diffusion processes is caused by the distinct kinetics of hot electrons in polar semiconductors with strong electron – optical phonon coupling. We have suggested that measurements of the diffusion coefficient of electrons subjected to electric and magnetic fields facilitate the identification of features of different electron transport regimes and the development of more efficient devices and practical applications. This work is partially supported by the Ministry of Education and Science of Ukraine (Project M/24-2018) and German Federal Ministry of Education and Research (BMBF Project 01DK17028). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields Article published earlier |
| spellingShingle | Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields Syngaivska, G.I. Koroteev, V.V. Kochelap, V.A. Semiconductor physics |
| title | Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields |
| title_full | Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields |
| title_fullStr | Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields |
| title_full_unstemmed | Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields |
| title_short | Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields |
| title_sort | diffusion properties of electrons in gan crystals subjected to electric and magnetic fields |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215329 |
| work_keys_str_mv | AT syngaivskagi diffusionpropertiesofelectronsingancrystalssubjectedtoelectricandmagneticfields AT koroteevvv diffusionpropertiesofelectronsingancrystalssubjectedtoelectricandmagneticfields AT kochelapva diffusionpropertiesofelectronsingancrystalssubjectedtoelectricandmagneticfields |