Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2018
• Main Authors: Syngaivska, G.I., Koroteev, V.V., Kochelap, V.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Subjects: Semiconductor physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215329
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields / G.I. Syngaivska, V.V. Koroteev, V.A. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 325-335. — Бібліогр.: 42 назв. — англ.

We have studied the diffusion coefficient of hot electrons in GaN crystals under moderate electric (1...10 kV/cm) and magnetic (1…4 T) fields. Two configurations, parallel and crossed fields, have been analyzed. The study was carried out for compensated bulk-like GaN samples for various lattice temp...