Influence of boron doping on the photosensitivity of cubic silicon carbide
Photoelectric properties have been studied for 3С-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with the addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Цитувати: | Influence of boron doping on the photosensitivity of cubic silicon carbide / V.N. Rodionov, V.Ya. Bratus', S.O. Voronov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 92-97. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860479871510118400 |
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| author | Rodionov, V.N. Bratus', V.Ya. Voronov, S.O. |
| author_facet | Rodionov, V.N. Bratus', V.Ya. Voronov, S.O. |
| citation_txt | Influence of boron doping on the photosensitivity of cubic silicon carbide / V.N. Rodionov, V.Ya. Bratus', S.O. Voronov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 92-97. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Photoelectric properties have been studied for 3С-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with the addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity within the range 1.3…2.0 eV with the peak near 1.7 eV. Doping of 3С-SiC single crystals with B impurity leads to the appearance of an efficient recombination center with the thermal activation energy 0.27 ± 0.02 eV inside the band gap and to widening the spectral sensitivity of the material over the impurity long-wave range. Availability of boron results in changing the temperature dependence of photoconductivity from the decay characteristic to the activation one. It will allow expanding the operation range of devices based on 3C-SiC〈B〉 up to 500 °С and above it. In addition, the lux-ampere characteristics become linear, i.e., more convenient from the metrological viewpoint. Depending on the type of doping of 3C-SiC〈B〉 samples, pronounced variations of line positions in photoluminescence spectra in the near-infrared range are revealed.
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| first_indexed | 2026-03-23T18:51:09Z |
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ISSN 1560-8034, 1605-6582 (On-line), SPQEO, 2019. V. 22, N 1. P. 92-97.
© 2019, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
92
Optoelectronics and optoelectronic devices
Influence of boron doping on the photosensitivity
of cubic silicon carbide
V.N. Rodionov
1
, V.Ya. Bratus’
2
, S.O. Voronov
1
1
National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”
37, prosp. Peremohy, 03056 Kyiv, Ukraine
E-mail: v.rodionov@kpi.ua, s.voronov@kpi.ua
2
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
45, prosp. Nauky, 03680 Kyiv, Ukraine
E-mail: v_bratus@isp.kiev.ua
Abstract. Photoelectric properties have been studied for 3С-SiC single crystals obtained by
thermal decomposition of methyl trichlorosilane with addition of boron in the process of
growing or using diffusion into intentionally undoped crystals. Boron-doped samples
demonstrate the band of photosensitivity within the range 1.3…2.0 eV with the peak near
1.7 eV. Doping of 3С-SiC single crystals with B impurity leads to appearance of an
efficient recombination center with the thermal activation energy 0.27 ± 0.02 eV inside the
band gap and to widening the spectral sensitivity of the material over the impurity long-
wave range. Availability of boron results in changing the temperature dependence of
photoconductivity from the decay characteristic to the activation one. It will allow
expanding the operation range of devices based on 3C-SiC〈B〉 up to 500 °С and above it. In
addition, the lux-ampere characteristics becomes linear, i.e., more convenient from the
metrological viewpoint. Depending on the type of doping of 3C-SiC〈B〉 samples,
pronounced variations of line positions in photoluminescence spectra in near-infrared range
are revealed.
Keywords: cubic silicon carbide, boron doping, photoconductivity, photoluminescence.
doi: https://doi.org/10.15407/spqeo22.01.92
PACS 61.72.uf, 72.40.+w, 73.50.Pz, 78.55.Hx
Manuscript received 01.02.19; revised version received 23.02.19; accepted for publication
20.02.19; published online 30.03.19.
1. Introduction
Cubic and hexagonal polytypes of silicon carbide are
considered as a promising material for high-power, high-
frequency and high-temperature electronics due to their
wide bandgaps, large thermal conductivities, high
mobility of carriers and breakdown electric fields [1].
With respect to other polytypes, cubic silicon carbide 3C-
SiC is more stable at lower temperature, and it can be
grown below the melting temperature of Si (1414 °C),
which permits its epitaxial growth on Si substrates.
Recent progress in growth of 3C-SiC epitaxial films [2]
has opened widespread possibilities for production of
high-quality devices and sensors. Application of SiC
devices for harsh environment operation necessitates
detailed knowledge of impurities, intrinsic and irradiation
damage defects and their thermal stability. This paper is
devoted to studying the photoconductivity (PC) of boron-
doped 3C-SiC single crystals within the temperature
range 100…500 K.
The particular feature of 3С-SiC single crystals is
their sectorial structure, which is related with difference
in the velocities of crystal faces growth: the faces {111},
{211}, {100} as well as {hhl} of the crystallogrophic belt
〈110〉 develop the most fast [3]. In the process of doping,
there takes place selective adsorption of impurities by
different faces, which causes differences in their
physical-and-chemical properties. For instance, the boron
impurity most efficiently penetrates into the faces {111}
and {211}, while that of nitrogen – into the faces {hhl}.
The role of boron, as one of the most important acceptor
impurities in SiC, in recombination processes is mainly
studied in electrical, luminescent and absorption
investigations aimed at hexagonal 4Н and 6Н as well as
cubic polytypes [4–8]. At the same time, characteristics
of non-radiative recombination channels defining
photoelectric properties of 3С-SiC〈B〉 are not practically
investigated up to date, and it limits their application as
various sensors. It is noteworthy that polycrystalline
SPQEO, 2019. V. 22, N 1. P. 92-97.
Rodionov V.N., Bratus V.Ya., Voronov S.O. et al. Influence of boron doping on the photosensitivity of cubic silicon …
93
3С-SiC with the boron impurity was offered as a material
for temperature sensors in the high-temperature range as
well as sensors for gas flows [9].
It was earlier shown [10, 11] that in n-type 3C-SiC
crystals the recombination process of non-equilibrium
charge carriers is controlled by two types of centers of
non-radiative recombination (r- and s-centers) as well as
by centers of trapping for major carriers. The r-centers
define thermal decay of photocurrent with the activation
energy of 0.2 eV and capture cross-section for electrons
by them Cer = 5·10
–18
cm
2
, while the latter value for the s-
centers is Ces = 10
–16
cm
2
. The trapping cross-sections for
holes by these centers are sharply different Cpr >> Cps,
and, due to it, the r-centers in n-type 3C-SiC are the
centers of photosensitivity [11]. It was ascertained [12]
that the increase in nitrogen concentration results in
enhancing the quantum yield for exciton luminescence
and in decreasing the lifetime of electrons. In this case,
the highest efficiency of photoluminescence is observed
in the {hhl} growth pyramids with high concentration of
uncompensated donors, while the highest
photosensitivity – in the {111} growth pyramids.
As known, the boron impurity in SiC can create
both shallow and deep levels [4, 5]. The shallow B-level
observed in measurements of deep-level transient
spectroscopy (DLTS), Hall effect [4, 5, 13] and electron
paramagnetic resonance (EPR) [14] is related to the
acceptor centers possessing the activation energy
Ev + (0.3…0.4) eV. The deep B-level pronounced in
photoluminescence (PL) and DLTS [4], in absorption [5]
and EPR [15] is characterized by creation of a deeper
acceptor level. Estimations of the ionization energy for
the deep B-level lead to the following values: 0.73 to
1.0 eV, when the boron impurity concentration changes
from 3.5⋅10
16
up to 1·10
18
cm
–3
[7]. The relationship
between concentrations of shallow and deep acceptor B-
centers depends on technology of material doping. It is
believed that the yellow in 6Н-SiC [4] and infrared in
3С-SiC [7] PL bands are related with these deep B-
centers. With account of results obtained using EPR and
electron-nuclear double resonance (ENDOR), it was
drawn the conclusion that boron atoms corresponding to
shallow levels substitute silicon atoms in SiC lattice and
create BSi-centers [14, 16]. In regard to deep B-levels,
they are ascribed to the boron – carbon vacancy
(BSi + Vc) complex in accord with the results of ENDOR
measurements [17].
The study of PL on undoped epitaxial 3С-SiC films
implanted with boron ions found that their spectra,
except for typical lines inherent to defects, contain a wide
band with the maximum close to 1.6 eV related with
boron centers [8]. The estimate of energy for optical
ionization of acceptors gives the value 0.7 eV above the
valence band top Еv, which is in good accordance with
the results of [7]. The obtained films were offered as
photodetectors, but their photoconductive properties
remained uncertain.
The aim of this work is to study the influence of the
boron acceptor impurity on stationary and relaxation
characteristics inherent to the photosensitivity of 3С-SiC.
2. Materials and methods
Studied in this work are photoelectric properties of 3С-
SiC single crystals obtained by thermal decomposition of
methyl trichlorosilane with addition of boron in the
process of growing or using diffusion into intentionally
undoped plate-like crystals, separated from which were
growth pyramids of the faces {111} and {211}. Before
boron diffusion, the crystals were grinded from the side
of small face А {111} down to the thickness 100 µm to
reach more uniform distribution of boron. Then the
crystals were degreased in СCl4, etched in HF+HNO3 and
washed out in distilled water. In the diffusion process, as
a source of doping impurity we used amorphous boron
placed on the chamber heater. Diffusion was performed
at the temperatures 1700…1800 °С for 20…30 hours in
the helium atmosphere. After diffusion, the surface layer
of several micrometers was removed. Then, the type of
conduction was determined using measurements of
thermal e.m.f. or Hall effect. As a result of embedding
boron, conduction of the samples was considerably
lowered and became of p-type. For some samples, we
performed measurements of EPR and PL spectra. The
availability of boron impurity has been proved by
detecting the EPR spectrum of shallow boron in all the
samples studied.
In this work, we studied stationary characteristics of
photoconductivity: the temperature ones within the range
100…500 K, spectral, lux-ampere as well as those of
photo-response relaxation.
3. Results
Adduced in Fig. 1 are the spectral characteristics of
photocurrent measured at the temperature Т = 90 K on
specially undoped 3С-SiC sample with Nd – Na =
= 10
16
cm
2
(curve 1), on the sample of the same set as
that where diffusion of the boron impurity was performed
(curve 2), and on the sample doped with boron in the
process of growing (curve 3). It is seen from this figure
that the spectrum of undoped sample within the impurity
range has a weak structure that can be related with
availability of background impurities in these crystals [4,
11]. The sample doped in the process of growing
demonstrates the band of photosensitivity within the
range 1.3…2.0 eV with the peak near 1.7 eV. The sample
doped by diffusion, as compared with the undoped one,
also has the considerable photosensitivity within all the
impurity range with a weak peak in the same region and
approximately the same long-wave boundary for
photoconduction.
Essential qualitative changes are observed in the
temperature dependence of the concentration of non-
equilibrium charge carriers µ~ In∆ (Fig. 2), where I is
the photocurrent, µ – mobility of charge carriers. In the
initial sample of n-type (curve 1), within the range of
high temperatures Т ≥ 170 K one can observe the
photocurrent decay with the activation energy close
to 0.2 eV. High-temperature boron diffusion or boron
SPQEO, 2019. V. 22, N 1. P. 92-97.
Rodionov V.N., Bratus V.Ya., Voronov S.O. et al. Influence of boron doping on the photosensitivity of cubic silicon …
94
Fig. 1. Spectral dependences of the photocurrent for
monocrystalline 3CSiC samples at Т = 90 K: 1 – undoped, 2 –
diffusion-doped, 3 – doped during growth.
Fig. 3. Photocurrent relaxation under additional illumination
Фill within the range of intrinsic absorption (filter СЗС-3): 1 –
without illumination, Фill = 0, 2 – Фill /Ф0 = 5, 3 – Фill /Ф0 = 8.
Ф0 – amplitude of pulsed excitation within the intrinsic band. 4
– illumination within the impurity absorption band Фill (filter
КС-2), Фill /Ф0 = 1.
Fig. 2. Temperature dependences of the concentration inherent
to non-equilibrium charge carriers, ∆n: 1 – for undoped,
2 – diffusion-doped, and 3 – crystal doped during growth,
4 – dependence of the concentration of equilibrium charge
carriers on temperature of a sample doped during growth.
Fig. 4. Temperature dependences of the time constant of the
photocurrent decay for the samples doped in the process of
growing (1), diffusion (2).
0.9 1.3 1.7 2.1 2.5
hν, eV
P
h
o
to
c
u
rr
e
n
t,
a
rb
.
4
8
12
– 3
– 2
– 1
P
h
o
to
c
u
rr
e
n
t,
a
rb
.
u
n
it
s
3
∆
n
,
a
rb
.
u
n
it
s
4 5 6 7
10
3
/T, K
–1
8 7
– 3
– 2
– 1
– 4
10
0
2
4
6
10
1
10
2
10
3
2
4
2
4
6
– 4
– 3
– 2
– 1
4
5
6
7
10
3
2
10
0
10 20 30
t, ms
P
h
o
to
c
u
rr
e
n
t,
a
rb
.
u
n
it
s
3 5
4
10
-2
2
3
5
7
10
-1
τ,
s
– 2
– 1
10
3
/T, K
–1
SPQEO, 2019. V. 22, N 1. P. 92-97.
Rodionov V.N., Bratus V.Ya., Voronov S.O. et al. Influence of boron doping on the photosensitivity of cubic silicon …
95
Fig. 5. PL spectra of 3C-SiC〈B〉 samples at 80 K doped with N
and B during crystal growth (1) and by B diffusion (2). Narrow
peaks in the range of 2.41–2.45 eV belong to Raman spectrum.
doping in the process of growing change the character of
this temperature dependence (Fig. 2, curves 2 and 3),
namely: the photocurrent increases with temperature, and
this dependence becomes exponential in a wide
temperature range.
The relaxation curves of photocurrent for the
samples doped during the process of growing or by
diffusion are symmetrical relatively their rise and drop,
therefore, they can be approximated with the only
exponent having the time constant τ = 0.01…0.05 s
(Fig. 3). In this case, τ very weakly changes with
temperature in the range studied (Fig. 4) both for doped
during growth (curve 1) and diffusion (curve 2) samples.
Besides, it does not depend on the intensity of additional
illumination Фill with intrinsic or impurity light in regard
to the main pulsed illumination Ф0 (Fig. 3).
Lux-ampere characteristics of the studied samples,
which were measured in the range of intrinsic absorption
at room temperature, indicate that introduction of boron
during growth or diffusion results in increasing the
exponent in the expression α
0Ф~I from α = 0.3 inherent
to the initial undoped sample up to α = 0.8…1.0 for the
samples doped by diffusion or during their growth.
4. Discussion
As it follows from experimental data, doping of the 3С-
SiC crystals with the boron acceptor impurity by using
both above methods leads to the increase in the material
resistivity, changes in the shape of PC spectrum, in the
character of photocurrent temperature dependence, its
kinetics, as well as changes in the exponent of lux-
ampere characteristics. PC measurements reveal a new
band with the long-wave edge near 1.3 eV and the
maximum close to 1.7 eV (Fig. 1), which is in accord
with the data of absorption measurements [8]. As
compared with the initial samples, the ones doped by
diffusion show an enhanced photosensitivity inside a
wider range up to the fundamental edge of material
(curve 2). As it follows from this figure, PC spectra of
the doped samples differ: in the case of diffusion doping,
the impurity band is considerably wider, which can be
caused by creation of impurity-defect complexes in the
process of B introduction [18]. It is also noteworthy that
the samples doped by diffusion demonstrate the emission
band related with B impurity in 6H polytype [19], which
is not observed in the samples doped during their growth
[18].
As it follows from Fig. 2 (curve 2), temperature
activation of samples doped by diffusion is related with
the center possessing the energy of thermal ionization
0.27 ± 0.02 eV. Its appearance is caused by boron
introduction, since the samples doped in the process of
growing (curve 3) have approximately the same slope.
Taking into account that the temperature dependence of
carrier dark concentration after boron doping has
approximately the same look (curve 4), one can assume
that this center of acceptor type defines also PC spectral
characteristics of 3С-SiC doped with boron. Like to the
centers in CdS [20], it is fully or partly radiationless.
Activation of the photocurrent in 3С-SiC of p-type can
be explained by the decrease in filling recombination
centers with holes, when temperature is increased, as
well as with increasing the stationary lifetime of holes in
the temperature range Т ≥ 150 K.
It follows from Fig. 3 that relaxation of
photocurrent is defined by one exponent with the time
constant weakly depending on temperature in a wide
range (Fig. 4) and on additional illumination with light
from the fundamental edge or from the impurity
absorption range as well. This fact along with the linear
lux-ampere characteristic means that photoconductivity
in the B-doped samples in our experimental conditions
has monopolar character, and the process of non-
equilibrium carriers recombination is controlled by the
only efficient deep center. To identify it, we need some
additional investigations.
It has been found earlier for 6H-SiC that B-related
PL band position and intensity vary in dependence on the
type of doping [6]. Our verification with PL of
3C-SiC〈B〉 samples prepared by doping of crystals
simultaneously with N and B during crystal growth as
well as the samples prepared using B diffusion into
unintentionally N-doped crystals reveals the same
feature. Fig. 5 shows PL spectra of both samples at 80 K
excited by the 488-nm line of an Ar
+
-ion laser with an
interferential filter. Both of these spectra display broad
emission band centered at about 2.15 eV and sets of
narrow peaks in near-infrared region. By contrast to
H. Kuwabara et al. [7], who observed a broad band for
nitrogen donor – boron acceptor pair recombination with
zero-phonon line (ZPL) at 1.640 eV in crystals grown
from the melt, the positions of ZPL equal to 1.621 and
1.577 eV for 3C-SiC〈B〉 samples doped from vapor and
by diffusion, respectively. Pronounced variation of
position and general view of PL spectra for 3C-SiC〈B〉
samples, depending on the type of doping, needs further
investigations.
SPQEO, 2019. V. 22, N 1. P. 92-97.
Rodionov V.N., Bratus V.Ya., Voronov S.O. et al. Influence of boron doping on the photosensitivity of cubic silicon …
96
5. Conclusions
• Doping of 3С-SiC single crystals with the acceptor
B impurity during growing or diffusion leads to
appearance of the efficient recombination center
with the thermal activation energy 0.27 ± 0.02 eV
inside the material band gap and to widening the
spectral sensitivity of this material over the impurity
long-wave range.
• Doping with boron results in changing the
temperature dependence of photoconductivity from
the decay characteristic to the activation one. It will
allow expanding the operation range of devices
based on 3C-SiC〈B〉 up to 500 °С and above it.
• After embedding boron, the lux-ampere
characteristic becomes linear, i.e., more convenient
from the metrological viewpoint.
Acknowledgments
The authors are grateful to Dr. O. Kolomys and Prof.
V. Strelchuk for assistance in PL characterizations.
References
1. Silicon Carbide. V. 2: Power Devices and Sensors.
P. Friedrichs, T. Kimoto, L. Ley, G. Pensl (eds.).
Wiley-VCH Verlag GmbH, Weinheim, 2011.
2. Fundamentals of Silicon Carbide Technology:
Growth, Characterization, Devices and
Applications. T. Kimoto and J.A. Cooper (eds.).
Wiley-IEEE Press, 2014.
3. Gorin S.N. and Ivanova L.M. Cubic silicon carbide
(3C-SiC): Structure and properties of single crystals
grown by thermal decomposition of methyl
trichlorosilane in hydrogen. phys. status solidi (b).
1997. 202. P. 221–245; https://doi.org/10.1002/1521-
3951(199707)202:1<221::AID-PSSB221> 3.0.CO;2-L.
4. Suttrop W., Pensl G., Lanig P. Boron-related deep
centers in 6H-SiC. Appl. Phys. A. 1990. 51. P. 231–
237; https://doi.org/10.1134/1.1187657.
5. Lebedev A.A. Deep level centers in silicon
carbide: A review. Semiconductors. 1999. 33. P.
107–130.
6. Hagen S.H., Kemenade A.W.C. On the role of
boron in the luminescence of silicon carbide doped
with nitrogen and boron. physica status solidi (a).
1976. 33, No 1. P. 97–105.
DOI: 10.1002/pssa.2210330109.
7. Kuwabara H., Yamada S. Free-to-bound transition
in β-SiC doped with boron. physica status solidi (a).
1975. 30. P. 739–746;
https://doi.org/10.1002/pssa.2210300234.
8. M. Syväjärvi, Ma Quanbao, Jokubavicius V.,
Galeckas A. et al. Cubic silicon carbide as a
potential photovoltaic material. Solar Energy
Materials & Solar Cells. 2016. 145. P. 104–108;
doi: 10.1016/j.solmat.2015.08.029.
9. Bubulis A., Voronov S.A., Genkin A.M., Bratus
T.I., Rodionov V.N. Thermoanemometery based on
polycrystalline silicon carbide cubic modification.
Bulletin of National Technical University of
Ukraine “Kyiv Politechnic Institute,
Series INSTRUMENT MAKING. 2016. 52, No 2. P.
42–47.
10. Altaisky Y.M., Pletjushkin A.A., Rodionov V.N.
The temperature dependence of the photocurrent in
cubic silicon carbide. Ukr. J. Phys. 1985. 30, No 9.
P. 1417–1420.
11. Altaisky Y.M., Rodionov V.N. About main
parameters of the recombination centers in cubic
silicon carbide. Ukr. J. Phys. 1985. 30, No 10. P.
1512–1515.
12. Rodionov V.N., Bratus’ V.Ya. Influence of nitrogen
impurity on radiative and nonradiative
recombination in cubic silicon carbide. Ukr. J.
Phys. 2001. 46. P. 979–984.
13. O.V. Aleksandrov, E.N. Mokhov. Model of boron
diffusion from gas phase in silicon carbide.
Semiconductors. 2011. 45, No 6. P. 705–712. DOI:
10.1134/S1063782611060029.
14. Baran N.P., V Bratus’.Ya., Bugai A.A., Vikhnin
V.S., Klimov A.A., Maksimenko V.M., Petrenko
T.L., Romanenko V.V. Electron spin resonance of
boron in cubic SiC: manifestation of the Jahn-Teller
effect. Phys. Solid State. 1993. 35, No 11. P. 1544–
1548.
15. Baranov P.G., Mokhov E.N. Electron paramagnetic
resonance of deep boron in silicon carbide.
Semicond. Sci. Technol. 1996. 11. P. 489–494;
https://doi.org/10.1088/0268-1242/11/4/005.
16. Petrenko T.T., Petrenko T.L. Density functional
theory study of the shallow boron impurity in 3C-
SiC and comparison with experimental data. Phys.
Rev. B. 2016. 93. P. 165203;
https://doi.org/10.1103/PhysRevB.93.165203.
17. van Duijn-Arnold A., Ikoma T., Poluektov O.G.,
Baranov P.G., Mokhov E.N., Schmidt J. Electronic
structure of the deep boron acceptor in boron-doped
6H-SiC. Phys. Rev. B. 1998. 57. P. 1607–1619.
18. Ballandovich V.S., Mokhov E.N. Annealing of deep
boron centers in silicon carbide. Semiconductors.
2002. 36. P. 160–166.
19. Violin E.E. and Kholuyanov G.F. Extraction of
carriers by the field of the p-n junction and
mechanism of electroluminescence in SiC. Sov.
Phys. Solid State. 1966. 8. P. 2716–2718.
20. Lyubchenko А.V., Sheinkman М.K. The
temperature quenching of the photocurrent and
photoluminescence in wideband semiconductors.
Ukr. J. Phys. 1973. 18, No 2. P. 291–299.
SPQEO, 2019. V. 22, N 1. P. 92-97.
Rodionov V.N., Bratus V.Ya., Voronov S.O. et al. Influence of boron doping on the photosensitivity of cubic silicon …
97
Authors and CV
Voronov S.A. Professor, Doctor of
Technical Sciences, Chief of
Department of Applied Physics,
I. Sikorskyi National Technical
University of Ukraine “Kyiv
Polytechnic Institute”. The area of
scientific interest of Prof.
S.A. Voronov includes optoelec-
tronics and infrared techniques.
I. Sikorskyi National Technical University of Ukraine
“Kyiv Polytechnic Institute”
E-mail s.voronov @ kpi.ua
ORCID ID 0000-0002-0053-0381
Rodionov V.N. Senior Researcher,
Doctor of Phil., I. Sikorskyi National
Technical University of Ukraine
“Kyiv Polytechnic Institute”. The area
of scientific interest of Researcher
V.N. Rodionov includes photo-
electrical and luminescent processes
in solid state.
I. Sikorskyi National Technical University of Ukraine
“Kyiv Polytechnic Institute”
E-mail v.rodionov@kpi.ua
ORCID ID 0000-0001-6300-4840
Bratus’ V.Ya. Doctor of Sciences in
Physics and Mathematics, Acting
Head of the Laboratory of
Radiospectroscopy in the Department
of Optics and Spectroscopy, V. Lash-
karyov Institute of Semiconductor
Physics, NAS of Ukraine. The area of
scientific interests of Dr. Bratus’
includes determination of intrinsic
and extrinsic defects in semiconductors and solid state by
EPR, ENDOR and photoluminescence.
V. Lashkaryov Institute of Semiconductor Physics,
National Academy of Sciences of Ukraine
E-mail: v_bratus@isp.kiev.ua
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| id | nasplib_isofts_kiev_ua-123456789-215422 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:51:09Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Rodionov, V.N. Bratus', V.Ya. Voronov, S.O. 2026-03-16T10:58:59Z 2019 Influence of boron doping on the photosensitivity of cubic silicon carbide / V.N. Rodionov, V.Ya. Bratus', S.O. Voronov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 92-97. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 61.72.uf, 72.40.+w, 73.50.Pz, 78.55.Hx https://nasplib.isofts.kiev.ua/handle/123456789/215422 https://doi.org/10.15407/spqeo22.01.92 Photoelectric properties have been studied for 3С-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with the addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity within the range 1.3…2.0 eV with the peak near 1.7 eV. Doping of 3С-SiC single crystals with B impurity leads to the appearance of an efficient recombination center with the thermal activation energy 0.27 ± 0.02 eV inside the band gap and to widening the spectral sensitivity of the material over the impurity long-wave range. Availability of boron results in changing the temperature dependence of photoconductivity from the decay characteristic to the activation one. It will allow expanding the operation range of devices based on 3C-SiC〈B〉 up to 500 °С and above it. In addition, the lux-ampere characteristics become linear, i.e., more convenient from the metrological viewpoint. Depending on the type of doping of 3C-SiC〈B〉 samples, pronounced variations of line positions in photoluminescence spectra in the near-infrared range are revealed. The authors are grateful to Dr. O. Kolomys and Prof. V. Strelchuk for assistance in PL characterizations. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optoelectronics and optoelectronic devices Influence of boron doping on the photosensitivity of cubic silicon carbide Article published earlier |
| spellingShingle | Influence of boron doping on the photosensitivity of cubic silicon carbide Rodionov, V.N. Bratus', V.Ya. Voronov, S.O. Optoelectronics and optoelectronic devices |
| title | Influence of boron doping on the photosensitivity of cubic silicon carbide |
| title_full | Influence of boron doping on the photosensitivity of cubic silicon carbide |
| title_fullStr | Influence of boron doping on the photosensitivity of cubic silicon carbide |
| title_full_unstemmed | Influence of boron doping on the photosensitivity of cubic silicon carbide |
| title_short | Influence of boron doping on the photosensitivity of cubic silicon carbide |
| title_sort | influence of boron doping on the photosensitivity of cubic silicon carbide |
| topic | Optoelectronics and optoelectronic devices |
| topic_facet | Optoelectronics and optoelectronic devices |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215422 |
| work_keys_str_mv | AT rodionovvn influenceofborondopingonthephotosensitivityofcubicsiliconcarbide AT bratusvya influenceofborondopingonthephotosensitivityofcubicsiliconcarbide AT voronovso influenceofborondopingonthephotosensitivityofcubicsiliconcarbide |