Influence of boron doping on the photosensitivity of cubic silicon carbide
Photoelectric properties have been studied for 3С-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with the addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2019 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215422 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of boron doping on the photosensitivity of cubic silicon carbide / V.N. Rodionov, V.Ya. Bratus', S.O. Voronov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 92-97. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862601848100225024 |
|---|---|
| author | Rodionov, V.N. Bratus', V.Ya. Voronov, S.O. |
| author_facet | Rodionov, V.N. Bratus', V.Ya. Voronov, S.O. |
| citation_txt | Influence of boron doping on the photosensitivity of cubic silicon carbide / V.N. Rodionov, V.Ya. Bratus', S.O. Voronov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 92-97. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Photoelectric properties have been studied for 3С-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with the addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity within the range 1.3…2.0 eV with the peak near 1.7 eV. Doping of 3С-SiC single crystals with B impurity leads to the appearance of an efficient recombination center with the thermal activation energy 0.27 ± 0.02 eV inside the band gap and to widening the spectral sensitivity of the material over the impurity long-wave range. Availability of boron results in changing the temperature dependence of photoconductivity from the decay characteristic to the activation one. It will allow expanding the operation range of devices based on 3C-SiC〈B〉 up to 500 °С and above it. In addition, the lux-ampere characteristics become linear, i.e., more convenient from the metrological viewpoint. Depending on the type of doping of 3C-SiC〈B〉 samples, pronounced variations of line positions in photoluminescence spectra in the near-infrared range are revealed.
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| first_indexed | 2026-03-23T18:51:09Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215422 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:51:09Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Rodionov, V.N. Bratus', V.Ya. Voronov, S.O. 2026-03-16T10:58:59Z 2019 Influence of boron doping on the photosensitivity of cubic silicon carbide / V.N. Rodionov, V.Ya. Bratus', S.O. Voronov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 92-97. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 61.72.uf, 72.40.+w, 73.50.Pz, 78.55.Hx https://nasplib.isofts.kiev.ua/handle/123456789/215422 https://doi.org/10.15407/spqeo22.01.92 Photoelectric properties have been studied for 3С-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with the addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity within the range 1.3…2.0 eV with the peak near 1.7 eV. Doping of 3С-SiC single crystals with B impurity leads to the appearance of an efficient recombination center with the thermal activation energy 0.27 ± 0.02 eV inside the band gap and to widening the spectral sensitivity of the material over the impurity long-wave range. Availability of boron results in changing the temperature dependence of photoconductivity from the decay characteristic to the activation one. It will allow expanding the operation range of devices based on 3C-SiC〈B〉 up to 500 °С and above it. In addition, the lux-ampere characteristics become linear, i.e., more convenient from the metrological viewpoint. Depending on the type of doping of 3C-SiC〈B〉 samples, pronounced variations of line positions in photoluminescence spectra in the near-infrared range are revealed. The authors are grateful to Dr. O. Kolomys and Prof. V. Strelchuk for assistance in PL characterizations. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optoelectronics and optoelectronic devices Influence of boron doping on the photosensitivity of cubic silicon carbide Article published earlier |
| spellingShingle | Influence of boron doping on the photosensitivity of cubic silicon carbide Rodionov, V.N. Bratus', V.Ya. Voronov, S.O. Optoelectronics and optoelectronic devices |
| title | Influence of boron doping on the photosensitivity of cubic silicon carbide |
| title_full | Influence of boron doping on the photosensitivity of cubic silicon carbide |
| title_fullStr | Influence of boron doping on the photosensitivity of cubic silicon carbide |
| title_full_unstemmed | Influence of boron doping on the photosensitivity of cubic silicon carbide |
| title_short | Influence of boron doping on the photosensitivity of cubic silicon carbide |
| title_sort | influence of boron doping on the photosensitivity of cubic silicon carbide |
| topic | Optoelectronics and optoelectronic devices |
| topic_facet | Optoelectronics and optoelectronic devices |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215422 |
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