Influence of boron doping on the photosensitivity of cubic silicon carbide
Photoelectric properties have been studied for 3С-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with the addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2019 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215422 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of boron doping on the photosensitivity of cubic silicon carbide / V.N. Rodionov, V.Ya. Bratus', S.O. Voronov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 92-97. — Бібліогр.: 20 назв. — англ. |