Influence of boron doping on the photosensitivity of cubic silicon carbide

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2019
• Hauptverfasser: Rodionov, V.N., Bratus', V.Ya., Voronov, S.O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Schlagworte: Optoelectronics and optoelectronic devices
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215422
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of boron doping on the photosensitivity of cubic silicon carbide / V.N. Rodionov, V.Ya. Bratus', S.O. Voronov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 92-97. — Бібліогр.: 20 назв. — англ.

Photoelectric properties have been studied for 3С-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with the addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity...