Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes
In this work, the method of electrophysical diagnostics of ohmic contacts to n⁺-n-n⁺ structures for powerful silicon impact ionization avalanche transit-time diodes has been proposed. The specific resistivity of the Au–Ti–Pd–n⁺-n-n⁺-Si contacts and the current-flow mechanism within the temperature r...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2019 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Цитувати: | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes / P.M. Romanets, R.V. Konakova, M.S. Boltovets, V.V. Basanets, Ya.Ya. Kudryk, V.S. Slipokurov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 34-38. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860480555945033728 |
|---|---|
| author | Romanets, P.M. Konakova, R.V. Boltovets, M.S. Basanets, V.V. Kudryk, Ya.Ya. Slipokurov, V.S. |
| author_facet | Romanets, P.M. Konakova, R.V. Boltovets, M.S. Basanets, V.V. Kudryk, Ya.Ya. Slipokurov, V.S. |
| citation_txt | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes / P.M. Romanets, R.V. Konakova, M.S. Boltovets, V.V. Basanets, Ya.Ya. Kudryk, V.S. Slipokurov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 34-38. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, the method of electrophysical diagnostics of ohmic contacts to n⁺-n-n⁺ structures for powerful silicon impact ionization avalanche transit-time diodes has been proposed. The specific resistivity of the Au–Ti–Pd–n⁺-n-n⁺-Si contacts and the current-flow mechanism within the temperature range 100…360 K has been investigated. The generalized method for studying the temperature dependence of the specific contact resistance in the case of multilayer structures with non-uniform doping levels has been proposed. The values of the specific contact resistance have been calculated from the temperature dependence of the total resistance of the vertical structure. The offered method can be used to control the electrophysical parameters of ohmic contacts between the etching cycles in the technology of manufacturing powerful silicon impact ionization avalanche transit-time diodes.
|
| first_indexed | 2026-03-23T19:02:02Z |
| format | Article |
| fulltext |
ISSN 1560-8034, 1605-6582 (On-line), SPQEO, 2019. V. 22, N 1. P. 34-38.
© 2019, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
34
Semiconductor physics
Peculiarities of study of Au–Ti–Pd–n
+
-n-n
+
-Si multilayer contact
structure to avalanche transit-time diodes
P.M. Romanets
1
, R.V. Konakova
1
, M.S. Boltovets
2
, V.V. Basanets
2
, Ya.Ya. Kudryk
1
, V.S. Slipokurov
1*
1
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
41, prosp. Nauky, 03680 Kyiv, Ukraine
2
State Enterprise “Research Institute “Orion”, Kyiv, Ukraine
*
E-mail: victor.slipokurov@gmail.com
Abstract. In this work, the method of electrophysical diagnostics of ohmic contacts to
n
+
-n-n
+
structures for powerful silicon impact ionization avalanche transit-time diodes has
been proposed. The specific resistivity of the Au–Ti–Pd–n
+
-n-n
+
-Si contacts and the
current-flow mechanism within the temperature range 100…360 K has been investigated.
The generalized method for studying the temperature dependence of the specific contact
resistance in the case of multilayer structures with non-uniform doping level has been
proposed. The values of the specific contact resistance have been calculated from the
temperature dependence of the total resistance of the vertical structure. The offered method
can be used to control the electrophysical parameters of ohmic contacts between the etching
cycles in technology of manufacturing powerful silicon impact ionization avalanche transit-
time diodes.
Keywords: specific resistance, ohmic contact, impact ionization avalanche transit-time
diode, thermal-field emission, thermionic emission.
doi: https://doi.org/10.15407/spqeo22.01.34
PACS 73.40.Cg
Manuscript received 07.02.19; revised version received 19.02.19; accepted for publication
20.02.19; published online 30.03.19.
1. Introduction
Operation of powerful silicon impact ionization
avalanche transit-time (IMPATT) diodes in the pulsed
mode is accompanied by significant overheating. In this
case, the value of the specific contact resistance (ρc)
of the ohmic contacts to n
+
-Si must not exceed
ρc < 10
–5
Ohm·сm
2
[1]. Therefore, the control of electro-
physical parameters, in particular the temperature
dependence of the specific contact resistance, of vertical
structures in a wide temperature range is an urgent task in
technology of powerful impact ionization avalanche
transit-time diodes [2, 3]. For them, it is necessary to
develop express methods for controlling the temperature
dependences of the parameters of semiconductor
structures at the intermediate stages of the design of
IMPATT diodes.
Typically, a transition layer of metal silicide is used
to form ohmic (non-rectifying) contacts, it is formed by
spraying metallization on the heated substrate as a result
of interaction of metal with semiconductor. Properties of
a solid solution are inherent to silicide. And some of its
electrophysical properties distinguish it from both metal
and semiconductor. Since the stability of the formed
contact depends, to a large extent, on the properties of the
transition layer, the control of the value of the specific
contact resistance and mechanisms of current flow in the
ohmic contacts is necessary to predict the stable
operation of IMPATT. In this paper, we have considered
the mechanisms of current flow in non-rectifying
contacts Au–Ti–Pd–n
+
-n-n
+
-Si within the temperature
range from 100 to 360 K, the peculiarities of the
temperature dependence of ρc and method of calculating
the specific contact resistance of vertical ohmic contacts
with non-uniform doping level.
2. Samples and research methods
Vertical ohmic contacts on the basis of silicon with steps
of doping metal-n
+
, n
+
-n and n-n
+
were studied. The
silicon substrate was doped with phosphorus. The ohmic
contacts were formed using following technology: the
layers of metallization Pd (20 nm)–Ti (60 nm)–
Au (150 nm) were deposited by magnetron sputtering on
SPQEO, 2019. V. 22, N 1. P. 34-38.
Romanets P.M., Konakova R.V., Boltovets M.S., Basanets V.V., Kudryk Ya.Ya., Slipokurov V.S. Peculiarities of study …
35
Fig. 1. The layered structure of two types of investigated ohmic
contacts Au–Ti–Pd–n+-n-n+-Si: I – non-etched, II – etched
mesa-structure.
a heated to 350 °С silicon substrate after photon cleaning
in a single technological cycle. On the front side, by the
method of photolithography, groups of radial contacts of
different radii (115, 100, 82.5, 67.5, 55.5, 47.5, 40, 27.5
and 17.5 µm) were formed. On the other side, a solid rear
contact was formed. There were investigated the contacts
of two types with different technology of vertical
structures: I – non-etched (Fig. 1, left side), II – etched
mesa-structure (Fig. 1, right side). Parameters of layers in
the n
+
-n-n
+
structure are listed in Table 1.
Measurements of contact resistance were carried out
using an automated complex based on the probe station
“Zond-A5” and voltmeter B7-46/1.
3. Results and discussion
It is impossible to calculate the temperature dependence
of the contact specific resistance of these multilayer
structures using classical methods (Cox–Strack and
Brooks–Mathes). The theoretical model for calculating
the resistance in the multilayer structures described
above (at T = 300 K) was considered in the work [4]. In
this paper, the indicated theoretical model for studying
the temperature dependences of the contact resistance
was used.
To simulate the temperature dependence, it is also
necessary to calculate the volume specific resistance of
the semiconductor as a function of temperature. Methods
for calculating the specific resistance (mobility) for Si are
well known (see, for example, [5] pp. 96–104). We note
only that in the region of low temperatures (T < 150 K)
the scattering of carriers by charged impurities is poorly
described by the Brooks–Herring potential (see p. 189
[5]). Obviously, the correct description of such processes
on the whole temperature scale requires the refusal
Table 1. Parameters of layers of n+-n-n+ structure.
of the Born approximation. This leads to unjustifiably
complex methods (for example, the method of partial
phase shifts, p. 194 [5] or application of the theory of
density functional [6]). In this study, we only accounted
nonlinear additions to the Brooks–Herring potential [7-
9], believing that the Born approximation is permissible
in this area. As a result, the calculated resistance is
significantly higher (5…10%) in the temperature range
(T < 150 K) than the resistance calculated without taking
into account the nonlinear additions.
The specific resistance is inversal to the
conductance of semiconductor:
σ
=ρ
1
. (1)
The conductance of semiconductor with the
ellipsoidal law of dispersion (ellipsoid of rotation) of the
main carriers can be written as:
×
ξ
ξ−ε
σ=σ ∫ ∫
+∞ +∞
∞−
d
dF
dkkdk
TN
ltt
val )(
3
0
0
5.1
ν
+
ν
×
22
),(
1
),(
1
t
t
tltl
l
tll m
k
kkm
k
kk
, (2)
where Nval is the number of valleys,
1 1
0
σ 0.542 Ohm сm− −≈ ⋅ , T – temperature in Kelvin.
The remaining variables are dimensionless: ξ ,
t
t
l
l
m
k
m
k
22
22
+=ε – the chemical potential and energy of
the carrier in the units of temperature, kl and kt are the
dimensionless impulses along the principal axes of the
ellipsoid, ml and mt – corresponding effective masses in
the units of mass of free electron,
( )[ ] 1
exp1)(
−ξ−ε+=ξ−εF is the Fermi distribution,
( )tltl kk ,,ν are the pulse relaxation frequencies along the
corresponding axes per one picosecond (averaging over
the angles is already made).
At ultrahigh concentrations 320cm10),( −≥ξ Tn , the
effect of the nonparabolicity of dispersion law is also
manifested, which is easy to account when numerical
calculations by simple substitution of
( )[ ]Tmkmm tltltltltl
2
,,,,, /1 α+→ where the parameters
of nonparabolicity are 4
104.0
−⋅=α l
and 4103.0 −⋅=α t .
Structure h1, µm h2–h1, µm h–h2, µm
Nd, cm
–3
h1
Nd, cm
–3
h2–h1,
Nd, cm
–3
h–h2,
Notes
Type І Without etching
Type ІІ
0.1 2 250 10
20
5·10
16
4·10
18
Etched mesa-structure
SPQEO, 2019. V. 22, N 1. P. 34-38.
Romanets P.M., Konakova R.V., Boltovets M.S., Basanets V.V., Kudryk Ya.Ya., Slipokurov V.S. Peculiarities of study …
36
3.1. Contact resistance
In order to ascertain the mechanism of current flow in
contact, studying the temperature dependence of the
specific contact resistance ρc was performed. Since the
donor concentration in semiconductor is quite large
(~10
20
cm
–3
), the tunneling mechanism of the current
flow through the potential barrier was expected in the
whole temperature range. Indeed, when calculating the
Padovani–Stratton parameter E00 [10], we see that it is
larger than kBT in the whole investigated temperature
range:
eV076.0
2 *00 ≈
ε
=
s
d
m
N
E
h
, (3)
where ħ is the modified Planck constant, m
*
– effective
mass of electron, εs – dielectric permittivity of semicon-
ductor, Nd – concentration of the doping impurity.
When the conditions [11] E00 >> kBT (kB –
Boltzmann constant) are valid, the field mechanism of
current flow is implemented; in the case E00 ≈ kBT, the
thermal field mechanism is realized; at E00 << kBT –
thermoelectronic one.
At the same time, the experimental temperature
dependence of the specific contact resistance in Fig. 2
can not be described by either the field nor the thermal-
field function. Also, the absolute values of the specific
contact resistance are much higher than the theoretical
ones in the assumption of the thermal-field mechanism.
20 40 60 80 100 120
-6,0
-5,5
-5,0
-4,5
-4,0
-3,5
-3,0
-2,5
ln
(R
c
T
)
(k
B
T)
-1
, eV
-1
Type I
Type II
Thermal-field mechanism
Approximation by function (7)
Fig. 2. Temperature dependences ρc plotted in the coordinates
of thermionic emission, for both types of the formed ohmic
contacts: ● – ohmic contacts of the type I (initial structure);
■ – ohmic contacts of the type II (etched mesa-structure);
dashed line – calculated temperature dependence of the
thermal-field mechanism of current flow (6); solid line –
approximation by the function (7) with the used parameters
from Table 1.
As can be seen from Fig. 2, at the temperatures
above 300 K there is a strong temperature dependence
close to the thermionic emission, that may be converted
into a straight line by plotting in the coordinates
( ) ( )B
ln 1
c
R T f k T= . However, if we find the height of
the barrier eff bϕ from the coefficient of inclination of
this line and substitute it into the equation for thermionic
emission (4), then the absolute value of the specific
contact resistance will be significantly lower than the
expected one:
ϕ
⋅=
∗ TkTqA
k
R b
c
B
eff exp (4)
where A
*
is the modified Richardson constant.
This is possible in the case when in the current flow
not the entire area is involved, but some part of it. Then
the contact resistance can be calculated by introducing
the coefficient B equal to the ratio of the total contact
area to the area involved in the current flow:
ϕ
⋅=
∗ TkTqA
Bk
R b
cs
B
eff B exp . (5)
The calculation of the parameter B shows that the
area involved in thermoelectronic current flow is two
orders of magnitude smaller than the total contact area.
At the same time, the current flow across the whole
contact area occurs in accord with the thermal field
mechanism with some effective interval, which is
characterized by the thickness of the order of several
lattice parameters. A simplified thermal-field dependence
can be represented as:
( )
⋅
ϕ
⋅=
TkEE
BR b
ct
B0000
1
1
ctgh
exp . (6)
where В1 is the coefficient that includes the pre-
exponential variables and is weakly dependent on
temperature, φb1 – height of the potential barrier for the
whole contact area. The dependence (6) is given in Fig. 2
by the dashed line and well describes the temperature
dependence of the specific contact resistance within the
range of temperatures 100…150 K.
The total contact resistance is determined using the
formula for the resistances connected in parallel:
,cs ct
c
cs ct
R R
R
R R
⋅
=
+
(7)
Approximation by the dependence (7) is given in
Fig. 2 with the solid lines. The parameters of
approximation are listed in Table 2.
SPQEO, 2019. V. 22, N 1. P. 34-38.
Romanets P.M., Konakova R.V., Boltovets M.S., Basanets V.V., Kudryk Ya.Ya., Slipokurov V.S. Peculiarities of study …
37
Table 2. Parameters of approximation for the temperature
dependence of specific contact resistance.
Estimation of the height of the potential barrier φb1
was performed as the difference between the work
function of electrons from Pd2S [3] and the electron
affinity to Si electron. The temperature dependences for
both types of contacts are practically the same, the
difference between them is only in dispersion of
parameters of ohmic contacts.
It should be noted that the study of the temperature
dependence of the specific contact resistance in the
Au–Ti–Pd–n
+
-Si contact at the thickness of the Pd layer
close to 30 nm as a contact-forming layer, which were
performed by the authors [12], indicates the
implementation of the current flow mechanism through
metallic shunts conjugated with high conductivity density
dislocations (~10
7
…10
8
cm
–2
) [13]. In this case, the
specified current flow mechanism is expressed in the
form of a dependence increasing with the temperature of
the specific contact resistance.
In our case, for both types of contacts the
decreasing temperature dependence of the specific
contact resistance is observed from the experimental data
obtained. The possible explanation for this change in the
current flow mechanism is the fact that a more thin Pd
layer (20 nm) is used. As a result, formation of smaller
crystallites in the polycrystalline Pd2Si contact-forming
layer occurs. Each of the crystallites is a concentrator of
mechanical stresses, decrease of their sizes leads to a
decrease in the values of maximum stresses, and, hence,
to the probability of their relaxation with formation of
dislocations. The less concentration of formed leading
dislocations will lead to the predominance of other
mechanisms of current flow, which is observed in our
work. The obtained results are in accordance with the
results obtained in [11], where analogous contacts to Si
(Pd thickness is 20 nm) with a lower concentration of the
dopant were considered. The temperature dependence of
these contacts is also decreased. There are areas with
thermal-field and field emission, that is, the mechanism
of current flow by shunts is not observed.
Thus, reducing the thickness of Pd in the contact to
20 nm leads to a decrease in internal mechanical stresses
at the interface and to improvement of the structure of the
semiconductor layer, which is especially important in
high-power silicon IMPATT diodes, where the
temperature dependence of the specific contact resistance
significantly influences on the output power. At the same
time, the thickness of the Si p
+
-layer (with a similar
contact-forming Pd layer) should be minimal for optimal
heat removal, whereas the vertical dislocations growing
through a thin, strongly doped layer to the active region
can negatively affect the reliability of these diodes [15].
4. Conclusions
The method of investigating the temperature dependence
of contact resistance, which is a generalization of the
Cox–Strack method in the case of multilayer
semiconductor structures with a non-uniform level of
doping, has been proposed.
From the study of the temperature dependence of
the resistivity of the Au–Ti–Pd–n
+
-n-n
+
-Si contacts
deposited on a substrate heated to 350 °C within the
temperature range 100…360 K, it can be concluded that,
at a sufficiently high concentration of the dopant
(~10
20
сm
–3
), the typical field emission in the low
temperature range is not observed. Instead, there is an
prevailing mechanism of thermal-field emission.
However, with the increase in the temperature for both
types of contacts, the prevailing mechanism of
thermionic emission with a potential barrier height of
~0.12 eV is observed. It should be noted that thermionic
emission passes through local areas of much smaller
area. As shown in authors’ work, the use of Pd as a
contact forms the layer with the thickness from the range
20 to 30 nm may affect the mechanism of current flow on
the specific contact resistance through the ohmic contact.
The proposed method of studying the temperature
dependence of the contact resistance can be used to
control the quality of the ohmic contact both for the
development of the formation modes and at the stage of
forming the mesa-structure when constructing the
powerful impact ionization avalanche transit-time diodes.
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B1,
Оhm·сm
2
φb, еV
φb1,
еV
E00,
еV
Value 100 1.47·10
–10
0.1236 1.05 0.076
SPQEO, 2019. V. 22, N 1. P. 34-38.
Romanets P.M., Konakova R.V., Boltovets M.S., Basanets V.V., Kudryk Ya.Ya., Slipokurov V.S. Peculiarities of study …
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Authors and CV
P.M. Romanets, Researcher at the
V. Lashkaryov Institute of
Semiconductor Physics. The area of
his scientific interests includes solid
state physics, transport properties in
ohmic contacts, electron gas under the
discontinuous magnetic field.
R.V. Konakova, Head of Laboratory
of physical and technological
problems of solid-state microwave
electronics at the V. Lashkaryov
Institute of Semiconductor Physics.
The area of her scientific interests
includes solid state physics, transport
properties in metal-semiconductor contacts, reliability of
semiconductor devices.
M.S. Boltovets, Head of Department
at the State Enterprise “Research
Institute “Orion”. The area of his
scientific interests includes IMPATT
and Gunn diode technology,
reliability of semiconductor devices.
V.V. Basanets, Researcher at the
State Enterprise “Research Institute
“Orion”. The area of his scientific
interests includes IMPATT and Gunn
diode technology, generator
efficiency.
Ya.Ya. Kudryk, Senior researcher at
the V. Lashkaryov Institute of
Semiconductor Physics. The area of
his scientific interests includes solid
state physics, transport properties in
metal-semiconductor contacts to SiC,
GaN, GaP, InP.
V.S. Slipokurov, Researcher at the
V. Lashkaryov Institute of
Semiconductor Physics. The area of
his scientific interests includes solid
state physics, transport properties in
ohmic contacts to silicon.
|
| id | nasplib_isofts_kiev_ua-123456789-215430 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T19:02:02Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Romanets, P.M. Konakova, R.V. Boltovets, M.S. Basanets, V.V. Kudryk, Ya.Ya. Slipokurov, V.S. 2026-03-16T11:00:51Z 2019 Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes / P.M. Romanets, R.V. Konakova, M.S. Boltovets, V.V. Basanets, Ya.Ya. Kudryk, V.S. Slipokurov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 34-38. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 73.40.Cg https://nasplib.isofts.kiev.ua/handle/123456789/215430 https://doi.org/10.15407/spqeo22.01.34 In this work, the method of electrophysical diagnostics of ohmic contacts to n⁺-n-n⁺ structures for powerful silicon impact ionization avalanche transit-time diodes has been proposed. The specific resistivity of the Au–Ti–Pd–n⁺-n-n⁺-Si contacts and the current-flow mechanism within the temperature range 100…360 K has been investigated. The generalized method for studying the temperature dependence of the specific contact resistance in the case of multilayer structures with non-uniform doping levels has been proposed. The values of the specific contact resistance have been calculated from the temperature dependence of the total resistance of the vertical structure. The offered method can be used to control the electrophysical parameters of ohmic contacts between the etching cycles in the technology of manufacturing powerful silicon impact ionization avalanche transit-time diodes. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes Article published earlier |
| spellingShingle | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes Romanets, P.M. Konakova, R.V. Boltovets, M.S. Basanets, V.V. Kudryk, Ya.Ya. Slipokurov, V.S. Semiconductor physics |
| title | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes |
| title_full | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes |
| title_fullStr | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes |
| title_full_unstemmed | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes |
| title_short | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes |
| title_sort | peculiarities of the study of au-ti-pd-n⁺-n-n⁺-si multilayer contact structure to avalanche transit-time diodes |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215430 |
| work_keys_str_mv | AT romanetspm peculiaritiesofthestudyofautipdnnnsimultilayercontactstructuretoavalanchetransittimediodes AT konakovarv peculiaritiesofthestudyofautipdnnnsimultilayercontactstructuretoavalanchetransittimediodes AT boltovetsms peculiaritiesofthestudyofautipdnnnsimultilayercontactstructuretoavalanchetransittimediodes AT basanetsvv peculiaritiesofthestudyofautipdnnnsimultilayercontactstructuretoavalanchetransittimediodes AT kudrykyaya peculiaritiesofthestudyofautipdnnnsimultilayercontactstructuretoavalanchetransittimediodes AT slipokurovvs peculiaritiesofthestudyofautipdnnnsimultilayercontactstructuretoavalanchetransittimediodes |