Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes
In this work, the method of electrophysical diagnostics of ohmic contacts to n⁺-n-n⁺ structures for powerful silicon impact ionization avalanche transit-time diodes has been proposed. The specific resistivity of the Au–Ti–Pd–n⁺-n-n⁺-Si contacts and the current-flow mechanism within the temperature r...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2019 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215430 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes / P.M. Romanets, R.V. Konakova, M.S. Boltovets, V.V. Basanets, Ya.Ya. Kudryk, V.S. Slipokurov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 34-38. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862742201303302144 |
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| author | Romanets, P.M. Konakova, R.V. Boltovets, M.S. Basanets, V.V. Kudryk, Ya.Ya. Slipokurov, V.S. |
| author_facet | Romanets, P.M. Konakova, R.V. Boltovets, M.S. Basanets, V.V. Kudryk, Ya.Ya. Slipokurov, V.S. |
| citation_txt | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes / P.M. Romanets, R.V. Konakova, M.S. Boltovets, V.V. Basanets, Ya.Ya. Kudryk, V.S. Slipokurov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 34-38. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, the method of electrophysical diagnostics of ohmic contacts to n⁺-n-n⁺ structures for powerful silicon impact ionization avalanche transit-time diodes has been proposed. The specific resistivity of the Au–Ti–Pd–n⁺-n-n⁺-Si contacts and the current-flow mechanism within the temperature range 100…360 K has been investigated. The generalized method for studying the temperature dependence of the specific contact resistance in the case of multilayer structures with non-uniform doping levels has been proposed. The values of the specific contact resistance have been calculated from the temperature dependence of the total resistance of the vertical structure. The offered method can be used to control the electrophysical parameters of ohmic contacts between the etching cycles in the technology of manufacturing powerful silicon impact ionization avalanche transit-time diodes.
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| first_indexed | 2026-03-23T19:02:02Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215430 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T19:02:02Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Romanets, P.M. Konakova, R.V. Boltovets, M.S. Basanets, V.V. Kudryk, Ya.Ya. Slipokurov, V.S. 2026-03-16T11:00:51Z 2019 Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes / P.M. Romanets, R.V. Konakova, M.S. Boltovets, V.V. Basanets, Ya.Ya. Kudryk, V.S. Slipokurov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 34-38. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 73.40.Cg https://nasplib.isofts.kiev.ua/handle/123456789/215430 https://doi.org/10.15407/spqeo22.01.34 In this work, the method of electrophysical diagnostics of ohmic contacts to n⁺-n-n⁺ structures for powerful silicon impact ionization avalanche transit-time diodes has been proposed. The specific resistivity of the Au–Ti–Pd–n⁺-n-n⁺-Si contacts and the current-flow mechanism within the temperature range 100…360 K has been investigated. The generalized method for studying the temperature dependence of the specific contact resistance in the case of multilayer structures with non-uniform doping levels has been proposed. The values of the specific contact resistance have been calculated from the temperature dependence of the total resistance of the vertical structure. The offered method can be used to control the electrophysical parameters of ohmic contacts between the etching cycles in the technology of manufacturing powerful silicon impact ionization avalanche transit-time diodes. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes Article published earlier |
| spellingShingle | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes Romanets, P.M. Konakova, R.V. Boltovets, M.S. Basanets, V.V. Kudryk, Ya.Ya. Slipokurov, V.S. Semiconductor physics |
| title | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes |
| title_full | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes |
| title_fullStr | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes |
| title_full_unstemmed | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes |
| title_short | Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes |
| title_sort | peculiarities of the study of au-ti-pd-n⁺-n-n⁺-si multilayer contact structure to avalanche transit-time diodes |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215430 |
| work_keys_str_mv | AT romanetspm peculiaritiesofthestudyofautipdnnnsimultilayercontactstructuretoavalanchetransittimediodes AT konakovarv peculiaritiesofthestudyofautipdnnnsimultilayercontactstructuretoavalanchetransittimediodes AT boltovetsms peculiaritiesofthestudyofautipdnnnsimultilayercontactstructuretoavalanchetransittimediodes AT basanetsvv peculiaritiesofthestudyofautipdnnnsimultilayercontactstructuretoavalanchetransittimediodes AT kudrykyaya peculiaritiesofthestudyofautipdnnnsimultilayercontactstructuretoavalanchetransittimediodes AT slipokurovvs peculiaritiesofthestudyofautipdnnnsimultilayercontactstructuretoavalanchetransittimediodes |