Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2019
• 1. Verfasser: Latreche, A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Schlagworte: Semiconductor physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215432
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes / A. Latreche // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 19-25. — Бібліогр.: 33 назв. — англ.

A new method to analyze reverse characteristics of a 4H-SiC Schottky barrier diode has been presented in this paper. The model incorporates both the current induced by the tunneling of carriers through the Schottky barrier and that induced by the thermionic emission of carriers across the metal–semi...