Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2019
• ISSN: 1560-8034
• Main Author: Latreche, A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Subjects: Semiconductor physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215432
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes / A. Latreche // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 19-25. — Бібліогр.: 33 назв. — англ.

A new method to analyze reverse characteristics of a 4H-SiC Schottky barrier diode has been presented in this paper. The model incorporates both the current induced by the tunneling of carriers through the Schottky barrier and that induced by the thermionic emission of carriers across the metal–semi...