Effect of the doping method on luminescent properties of ZnS:Ag

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2019
• Hauptverfasser: Bacherikov, Yu.Yu., Zhuk, A.G., Okhrimenko, O.B., Pecherskaya-Gromadskaya, E.Yu., Kidalov, V.V., Optasyuk, S.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Schlagworte: Optics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215487
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of the doping method on luminescent properties of ZnS:Ag / Yu.Yu. Bacherikov, A.G. Zhuk, O.B. Okhrimenko, E.Yu. Pecherskaya-Gromadskaya, V.V. Kidalov, S.V. Optasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 3. — С. 361-365. — Бібліогр.: 24 назв. — англ.

The effect of doping the method on the luminescent characteristics of dispersed ZnS doped with Ag has been studied in this work. The analysis of ratio of the intensity of photoluminescence bands related with the centres caused by Ag impurity and the intrinsic defects has led to the conclusion that f...