Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys
In this paper, we account for the electrical transport properties of Bi-Ga alloys studied theoretically by employing our well-known model pseudopotential. The impact of various screening functions was studied using various exchange and correlation functions in the aforesaid investigation. The obtain...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2019 |
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| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215494 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys / A.M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 3. — С. 323-325. — Бібліогр.: 18 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | In this paper, we account for the electrical transport properties of Bi-Ga alloys studied theoretically by employing our well-known model pseudopotential. The impact of various screening functions was studied using various exchange and correlation functions in the aforesaid investigation. The obtained results on electrical resistivity are found to be in qualitative agreement with the experimental data in the available literature.
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| ISSN: | 1560-8034 |