Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys

In this paper, we account for the electrical transport properties of Bi-Ga alloys studied theoretically by employing our well-known model pseudopotential. The impact of various screening functions was studied using various exchange and correlation functions in the aforesaid investigation. The obtain...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2019
Main Author: Vora, A.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/215494
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys / A.M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 3. — С. 323-325. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine