Effect of electron-beam treatment of sensor glass substrates for SPR devices on their metrological characteristics
Electron-beam treatment of the glass substrates for sensitive elements of SPR devices causes almost two-fold narrowing of their refractometric characteristics from 0.867 down to 0.453 degrees. The angular shift was also changed, which made the measuring range wider by 0.37 deg. The sensitivity of SP...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2019 |
| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215585 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of electron-beam treatment of sensor glass substrates for SPR devices on their metrological characteristics / V.A. Vashchenko, I.V. Yatsenko, Yu.I. Kovalenko, V.P. Kladko, O.Yo. Gudymenko, P.M. Lytvyn, A.A. Korchovyi, S.V. Mamykin, O.S. Kondratenko, V.P. Maslov, H.V. Dorozinska, G.V. Dorozinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 444-451. — Бібліогр.: 19 назв. — англ. |