Effect of electron-beam treatment of sensor glass substrates for SPR devices on their metrological characteristics

Electron-beam treatment of the glass substrates for sensitive elements of SPR devices causes almost two-fold narrowing of their refractometric characteristics from 0.867 down to 0.453 degrees. The angular shift was also changed, which made the measuring range wider by 0.37 deg. The sensitivity of SP...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2019
Hauptverfasser: Vashchenko, V.A., Yatsenko, I.V., Kovalenko, Yu.I., Kladko, V.P., Gudymenko, O.Yo., Lytvyn, P.M., Korchovyi, A.A., Mamykin, S.V., Kondratenko, O.S., Maslov, V.P., Dorozinska, H.V., Dorozinsky, G.V.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/215585
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Effect of electron-beam treatment of sensor glass substrates for SPR devices on their metrological characteristics / V.A. Vashchenko, I.V. Yatsenko, Yu.I. Kovalenko, V.P. Kladko, O.Yo. Gudymenko, P.M. Lytvyn, A.A. Korchovyi, S.V. Mamykin, O.S. Kondratenko, V.P. Maslov, H.V. Dorozinska, G.V. Dorozinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 444-451. — Бібліогр.: 19 назв. — англ.

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