Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena

The mechanisms of directional motion of highly mobile charged point defects in semiconductor structures under the non-thermal action of microwave radiation have been considered. The effects of particle drift along the direction of the electric field of a homogeneous electromagnetic wave and in the d...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2020
Hauptverfasser: Milenin, G.V., Redko, R.A.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/215663
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena / G.V. Milenin, R.A. Redko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 1. — С. 46-51. — Бібліогр.: 15 назв. — англ.

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