Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2020
• Hauptverfasser: Milenin, G.V., Redko, R.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Schlagworte: Semiconductor Physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215663
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena / G.V. Milenin, R.A. Redko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 1. — С. 46-51. — Бібліогр.: 15 назв. — англ.

The mechanisms of directional motion of highly mobile charged point defects in semiconductor structures under the non-thermal action of microwave radiation have been considered. The effects of particle drift along the direction of the electric field of a homogeneous electromagnetic wave and in the direction of its propagation, as well as the appearance of a gradient ponderomotive force in an inhomogeneous wave, have been analyzed. The features of the appearance of an electric force acting on charged point defects as a result of the formation of electron-hole junctions around charged dislocations have been studied. Analytical relationships describing the dynamics of impurity ions in semiconductor structures exposed to microwave radiation have been presented.