Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena

The mechanisms of directional motion of highly mobile charged point defects in semiconductor structures under the non-thermal action of microwave radiation have been considered. The effects of particle drift along the direction of the electric field of a homogeneous electromagnetic wave and in the d...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2020
Hauptverfasser: Milenin, G.V., Redko, R.A.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/215663
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Zitieren:Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena / G.V. Milenin, R.A. Redko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 1. — С. 46-51. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Milenin, G.V.
Redko, R.A.
author_facet Milenin, G.V.
Redko, R.A.
citation_txt Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena / G.V. Milenin, R.A. Redko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 1. — С. 46-51. — Бібліогр.: 15 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The mechanisms of directional motion of highly mobile charged point defects in semiconductor structures under the non-thermal action of microwave radiation have been considered. The effects of particle drift along the direction of the electric field of a homogeneous electromagnetic wave and in the direction of its propagation, as well as the appearance of a gradient ponderomotive force in an inhomogeneous wave, have been analyzed. The features of the appearance of an electric force acting on charged point defects as a result of the formation of electron-hole junctions around charged dislocations have been studied. Analytical relationships describing the dynamics of impurity ions in semiconductor structures exposed to microwave radiation have been presented.
first_indexed 2026-03-25T02:01:07Z
format Article
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2026-03-26T19:16:26Z
publishDate 2020
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Milenin, G.V.
Redko, R.A.
2026-03-24T12:21:32Z
2020
Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena / G.V. Milenin, R.A. Redko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 1. — С. 46-51. — Бібліогр.: 15 назв. — англ.
1560-8034
PACS: 72.30.+q, 72.90.+y
https://nasplib.isofts.kiev.ua/handle/123456789/215663
https://doi.org/10.15407/spqeo23.01.046
The mechanisms of directional motion of highly mobile charged point defects in semiconductor structures under the non-thermal action of microwave radiation have been considered. The effects of particle drift along the direction of the electric field of a homogeneous electromagnetic wave and in the direction of its propagation, as well as the appearance of a gradient ponderomotive force in an inhomogeneous wave, have been analyzed. The features of the appearance of an electric force acting on charged point defects as a result of the formation of electron-hole junctions around charged dislocations have been studied. Analytical relationships describing the dynamics of impurity ions in semiconductor structures exposed to microwave radiation have been presented.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Semiconductor Physics
Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena
Article
published earlier
spellingShingle Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena
Milenin, G.V.
Redko, R.A.
Semiconductor Physics
title Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena
title_full Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena
title_fullStr Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena
title_full_unstemmed Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena
title_short Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena
title_sort transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena
topic Semiconductor Physics
topic_facet Semiconductor Physics
url https://nasplib.isofts.kiev.ua/handle/123456789/215663
work_keys_str_mv AT mileningv transformationofdefectsinsemiconductorstructuresundertheinfluenceofmicrowaveelectromagneticradiationwhichisstimulatedbydriftphenomena
AT redkora transformationofdefectsinsemiconductorstructuresundertheinfluenceofmicrowaveelectromagneticradiationwhichisstimulatedbydriftphenomena