Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena

The mechanisms of directional motion of highly mobile charged point defects in semiconductor structures under the non-thermal action of microwave radiation have been considered. The effects of particle drift along the direction of the electric field of a homogeneous electromagnetic wave and in the d...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2020
Main Authors: Milenin, G.V., Redko, R.A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/215663
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena / G.V. Milenin, R.A. Redko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 1. — С. 46-51. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine