Doping the thin films by using the original Close Space Sublimation method

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2020
• Main Authors: Khomchenko, V.S., Sopinskyy, M.V., Dan'ko, V.A., Olkhovik, G.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Subjects: Semiconductor Physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215667
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Doping the thin films by using the original Close Space Sublimation method / V.S. Khomchenko, M.V. Sopinskyy, V.A. Dan'ko, G.P. Olkhovik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 1. — С. 5-28. — Бібліогр.: 89 назв. — англ.

The review is devoted to the results of studies on the structure, morphology, optical, and luminescent properties of thin films doped with the modified Close Space Sublimation method. Using this method, ZnO and ZnS films were doped with impurities of various metals – Ag, Cu, Ga. It has been shown th...