Shunt current in InAs diffused photodiodes

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2020
• Main Authors: Sukach, A.V., Tetyorkin, V.V., Tkachuk, A.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Subjects: Sensors
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215708
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Shunt current in InAs diffused photodiodes / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 208-213. — Бібліогр.: 23 назв. — англ.

The shunt current has been investigated in ⁺- type InAs diffused photodiodes. The mesastructures were prepared by etching in Br₂-HBr solution and sequentially etched in CP-4 and in a lactic acid-based etchant. The surface of mesastructures was passivated in an alcohol solution of Na₂S. After each ch...