Effect of different parameters on the carrier mobility in NWTFET
In this paper, we have studied the effect of different parameters on carrier mobility in NWFET devices. Their characteristics have been investigated using the non-equilibrium Green function (NEGF) method. Our work involves the carrier mobility µ as a function of VDS taken from 0.1 V to 1 V for vario...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2020 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215718 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of different parameters on the carrier mobility in NWTFET / R. Marki, M. Zaabat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 141-145. — Бібліогр.: 15 назв. — англ. |