Effect of different parameters on the carrier mobility in NWTFET

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2020
• Автори: Marki, R., Zaabat, M.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Теми: Semiconductor Physics
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/215718
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Effect of different parameters on the carrier mobility in NWTFET / R. Marki, M. Zaabat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 141-145. — Бібліогр.: 15 назв. — англ.

In this paper, we have studied the effect of different parameters on carrier mobility in NWFET devices. Their characteristics have been investigated using the non-equilibrium Green function (NEGF) method. Our work involves the carrier mobility µ as a function of VDS taken from 0.1 V to 1 V for various gate lengths, namely: 10, 20, 30, 40, and 50 nm. Then, the variation of µ as a function of the width of the nanowire varied from 2 to 6 nm. After that, we have simulated µ as a function of the oxide thickness for the values: 2, 4, and 6 nm. Moreover, the mobility has been considered as dependent on the composition of high- materials, namely: SiO₂, HfO₂, ZrO₂. Our results clearly show that device characteristics can be improved by selecting geometrical and physical parameters.