Effect of different parameters on the carrier mobility in NWTFET
In this paper, we have studied the effect of different parameters on carrier mobility in NWFET devices. Their characteristics have been investigated using the non-equilibrium Green function (NEGF) method. Our work involves the carrier mobility µ as a function of VDS taken from 0.1 V to 1 V for vario...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2020 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
|
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215718 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of different parameters on the carrier mobility in NWTFET / R. Marki, M. Zaabat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 141-145. — Бібліогр.: 15 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860956300749307904 |
|---|---|
| author | Marki, R. Zaabat, M. |
| author_facet | Marki, R. Zaabat, M. |
| citation_txt | Effect of different parameters on the carrier mobility in NWTFET / R. Marki, M. Zaabat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 141-145. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this paper, we have studied the effect of different parameters on carrier mobility in NWFET devices. Their characteristics have been investigated using the non-equilibrium Green function (NEGF) method. Our work involves the carrier mobility µ as a function of VDS taken from 0.1 V to 1 V for various gate lengths, namely: 10, 20, 30, 40, and 50 nm. Then, the variation of µ as a function of the width of the nanowire varied from 2 to 6 nm. After that, we have simulated µ as a function of the oxide thickness for the values: 2, 4, and 6 nm. Moreover, the mobility has been considered as dependent on the composition of high- materials, namely: SiO₂, HfO₂, ZrO₂. Our results clearly show that device characteristics can be improved by selecting geometrical and physical parameters.
|
| first_indexed | 2026-03-29T01:03:47Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215718 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-29T01:03:47Z |
| publishDate | 2020 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Marki, R. Zaabat, M. 2026-03-26T08:49:26Z 2020 Effect of different parameters on the carrier mobility in NWTFET / R. Marki, M. Zaabat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 141-145. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 62.23.Hj, 77.84.Bw, 85.30. Tv https://nasplib.isofts.kiev.ua/handle/123456789/215718 https://doi.org/10.15407/spqeo23.02.141 In this paper, we have studied the effect of different parameters on carrier mobility in NWFET devices. Their characteristics have been investigated using the non-equilibrium Green function (NEGF) method. Our work involves the carrier mobility µ as a function of VDS taken from 0.1 V to 1 V for various gate lengths, namely: 10, 20, 30, 40, and 50 nm. Then, the variation of µ as a function of the width of the nanowire varied from 2 to 6 nm. After that, we have simulated µ as a function of the oxide thickness for the values: 2, 4, and 6 nm. Moreover, the mobility has been considered as dependent on the composition of high- materials, namely: SiO₂, HfO₂, ZrO₂. Our results clearly show that device characteristics can be improved by selecting geometrical and physical parameters. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor Physics Effect of different parameters on the carrier mobility in NWTFET Article published earlier |
| spellingShingle | Effect of different parameters on the carrier mobility in NWTFET Marki, R. Zaabat, M. Semiconductor Physics |
| title | Effect of different parameters on the carrier mobility in NWTFET |
| title_full | Effect of different parameters on the carrier mobility in NWTFET |
| title_fullStr | Effect of different parameters on the carrier mobility in NWTFET |
| title_full_unstemmed | Effect of different parameters on the carrier mobility in NWTFET |
| title_short | Effect of different parameters on the carrier mobility in NWTFET |
| title_sort | effect of different parameters on the carrier mobility in nwtfet |
| topic | Semiconductor Physics |
| topic_facet | Semiconductor Physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215718 |
| work_keys_str_mv | AT markir effectofdifferentparametersonthecarriermobilityinnwtfet AT zaabatm effectofdifferentparametersonthecarriermobilityinnwtfet |