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Effect of different parameters on the carrier mobility in NWTFET

In this paper, we have studied the effect of different parameters on carrier mobility in NWFET devices. Their characteristics have been investigated using the non-equilibrium Green function (NEGF) method. Our work involves the carrier mobility µ as a function of VDS taken from 0.1 V to 1 V for vario...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2020
Hauptverfasser:	Marki, R., Zaabat, M.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
Schlagworte:	Semiconductor Physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215718
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Effect of different parameters on the carrier mobility in NWTFET / R. Marki, M. Zaabat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 141-145. — Бібліогр.: 15 назв. — англ.

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