Changes in impurity radiative recombination and surface morphology induced by the treatment of GaP in a weak magnetic field
In this work, the results of studying the long-term changes in the intensity of photoluminescence bands and surface morphology of gallium phosphide caused by treatment in weak magnetic fields have been presented. A non-thermal mechanism based on the idea of defect transformation due to the random ev...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2020 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
|
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215852 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Changes in impurity radiative recombination and surface morphology induced by the treatment of GaP in a weak magnetic field / R.A. Redko, G.V. Milenin, V.V. Milenin, S.M. Redko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 3. — С. 302-307. — Бібліогр.: 25 назв. — англ. |