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Changes in impurity radiative recombination and surface morphology induced by the treatment of GaP in a weak magnetic field

In this work, the results of studying the long-term changes in the intensity of photoluminescence bands and surface morphology of gallium phosphide caused by treatment in weak magnetic fields have been presented. A non-thermal mechanism based on the idea of defect transformation due to the random ev...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2020
ISSN:	1560-8034
Hauptverfasser:	Redko, R.A., Milenin, G.V., Milenin, V.V., Redko, S.M.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
Schlagworte:	Semiconductor Physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215852
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Changes in impurity radiative recombination and surface morphology induced by the treatment of GaP in a weak magnetic field / R.A. Redko, G.V. Milenin, V.V. Milenin, S.M. Redko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 3. — С. 302-307. — Бібліогр.: 25 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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