Changes in impurity radiative recombination and surface morphology induced by the treatment of GaP in a weak magnetic field

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2020
• Hauptverfasser: Redko, R.A., Milenin, G.V., Milenin, V.V., Redko, S.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Schlagworte: Semiconductor Physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215852
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Changes in impurity radiative recombination and surface morphology induced by the treatment of GaP in a weak magnetic field / R.A. Redko, G.V. Milenin, V.V. Milenin, S.M. Redko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 3. — С. 302-307. — Бібліогр.: 25 назв. — англ.

In this work, the results of studying the long-term changes in the intensity of photoluminescence bands and surface morphology of gallium phosphide caused by treatment in weak magnetic fields have been presented. A non-thermal mechanism based on the idea of defect transformation due to the random ev...