Determination of crystallization conditions of Ge/GaAs heterostructures in the scanning LPE method
We carried out the modelling of separate technological stages of scanning liquid phase epitaxy (SLPE) technique: wetting the substrate by the solution-melt using Ampere force, growing the epitaxial layer during a short-time contact between the substrate and solution-melt, and removing the solution-m...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2020 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215853 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Determination of crystallization conditions of Ge/GaAs heterostructures in the scanning LPE method / V.V. Tsybulenko, S.V. Shutov, S.Yu. Yerochin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 3. — С. 294-301. — Бібліогр.: 23 назв. — англ. |