Investigation of Ge p-i-n photodetector as a part of pulsed laser rangefinder prototype
The process of diffusion method for production of high-speed Ge p-i-n photodiodes for a laser rangefinder with a maximum photosensitivity at the wavelength 1.54 μm and a new passivating layer of ZnSe is described. Theoretical modeling of the rangefinder operation in real conditions was performed to...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2021 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/216091 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Investigation of Ge p-i-n photodetector as a part of pulsed laser rangefinder prototype / A.V. Fedorenko, I.O. Vorona, V.P. Maslov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 1. — С. 100-104. — Бібліогр.: 15 назв. — англ. |